component

2N7002KCWQ

Public Made by Adom

by adom

Yangzhou Yangjie Elec Tech MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors2n7002kcwqfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
2n7002kcwq / README.md
History Download
Ray Publish 0.1.0 694aabd 8d ago

2N7002KCWQ

Yangzhou Yangjie Elec Tech · MOSFETs · SOT-323

2N7002KCWQ from Yangzhou Yangjie Elec Tech, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; voltage-controlled gate with VGS rated ±20 V maximum and gate threshold of 1 V min to 2.5 V max at ID=250 µA, ESD protected up to 2.0 kV HBM.
2 S passive Source; body-diode continuous current rated 300 mA maximum and connected to the source side of the MOSFET.
3 D passive Drain; VDS rated 60 V maximum with continuous drain current of 300 mA at TA=25℃ and pulsed drain current of 1.5 A.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V 1
Gate-source voltage VGS -20 20 V 1
Drain current ID 300 mA TA=25℃ @ Steady State 1
Drain current ID 240 mA TA=70℃ @ Steady State 1
Pulsed drain current IDM 1.5 A 1
Total power dissipation PD 300 mW TA=25℃ 1
Thermal resistance junction-to-ambient RθJA 416 ℃/W @ Steady State 1
Junction and storage temperature range TJ,TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS= 0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -10 10 μA VGS= ±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 1.9 2.5 Ω VGS= 10V, ID=300mA 2
Static Drain-Source On-Resistance RDS(ON) 2 3 Ω VGS= 4.5V, ID=200mA 2
Diode Forward Voltage VSD 1.2 V IS=300mA,VGS=0V 2
Maximum Body-Diode Continuous Current IS 300 mA 2
Total Gate Charge Qg 1.65 2.4 nC VGS=10V,VDS=30V,ID=0.3A 2
Input Capacitance Ciss 27 pF VDS=30V,VGS=0V,f=1MHZ 2
Output Capacitance Coss 3 pF VDS=30V,VGS=0V,f=1MHZ 2
Reverse Transfer Capacitance Crss 2 pF VDS=30V,VGS=0V,f=1MHZ 2
Turn-on Delay Time tD(on) 6.5 ns VGS=10V,VDD=30V, ID=300mA, RGEN=6Ω 2
Turn-off Delay Time tD(off) 9.6 ns VGS=10V,VDD=30V, ID=300mA, RGEN=6Ω 2
Reverse recovery Time trr 24 ns VGS=0V,IS=300mA,VR=25V, di/dt=-100A/μs 2

CAD (KiCad official)

  • Symbol: 2N7002KCWQ
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: 2n7002kcwq-etched.step / 2n7002kcwq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002kcwq.step / 2n7002kcwq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (7 pp, sha256 01a0d6d057c57c2f, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF