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2N7002HR

Public Made by Adom

by adom

Nexperia MOSFETs, TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N7002HR

Nexperia · MOSFETs · TO-236AB

2N7002HR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage VGS is limited to -20 V to 20 V at Tamb = 25 °C.
2 S passive Source terminal; the source current IS is limited to 360 mA at Tamb = 25 °C in the source-drain diode.
3 D passive Drain terminal; the drain-source voltage VDS is limited to 60 V and the drain current ID to 360 mA at VGS = 10 V, Tamb = 25 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-236AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V 3
Gate-source voltage VGS -20 20 V Tamb = 25 °C 3
Drain current ID 360 mA VGS = 10 V; Tamb = 25 °C [1] 3
Drain current ID 230 mA VGS = 10 V; Tamb = 100 °C [1] 3
Peak drain current IDM 1.4 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 340 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 420 mW [1] (FR4 PCB, mounting pad for drain 1 cm2) 3
Total power dissipation Ptot 1.1 W Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS 360 mA Tamb = 25 °C [1] 3
Thermal resistance junction to ambient Rth(j-a) 310 370 K/W in free air; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint 5
Thermal resistance junction to ambient Rth(j-a) 260 300 K/W in free air; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2 5
Thermal resistance junction to solder point Rth(j-sp) 115 K/W 5
Drain-source breakdown voltage V(BR)DSS 60 V ID = 10 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 1.1 1.75 2.4 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 60 V; VGS = 0 V; Tj = 25 °C 6
Drain leakage current IDSS 10 µA VDS = 60 V; VGS = 0 V; Tj = 150 °C 6
Gate leakage current IGSS 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 1 1.6 Ω VGS = 10 V; ID = 500 mA; Tj = 25 °C 6
Drain-source on-state resistance RDSon 2.1 3.3 Ω VGS = 10 V; ID = 500 mA; Tj = 150 °C 6
Drain-source on-state resistance RDSon 1.3 2 Ω VGS = 5 V; ID = 50 mA; Tj = 25 °C 6
Total gate charge QG(tot) 0.3 0.5 nC VDS = 30 V; ID = 300 mA; VGS = 4.5 V; Tj = 25 °C 6
Source-drain voltage VSD 0.47 0.75 1.1 V IS = 115 mA; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: 2N7002HR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236AB (KiCad packages3D, STEP)
  • 3D model files: 2n7002hr-etched.step / 2n7002hr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002hr.step / 2n7002hr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 29476a373edb92f3, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF