component
2N7002H6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2N7002H6327
Infineon Technologies · MOSFETs · SOT-23
2N7002H6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage limited to ±20 V, with a gate threshold of 1.5 V min to 2.5 V max at ID=250 µA. |
| 2 | S | passive | Source pin; continuous drain current is 0.30 A at TA=25 °C and the body diode forward current is 0.3 A max. |
| 3 | D | passive | Drain pin; drain-source voltage rating is 60 V, with RDS(on) max of 3 Ω at VGS=10 V and 4 Ω at VGS=4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS=0 V, ID=250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | 1.5 | 2.1 | 2.5 | V | VDS=VGS, ID=250 µA | 2 |
| Drain-source leakage current | ID(off) | 0.1 | µA | VDS=60 V, VGS=0 V, Tj=25 °C | 2 | ||
| Drain-source leakage current | ID(off) | 5 | µA | VDS=60 V, VGS=0 V, Tj=150 °C | 2 | ||
| Gate-source leakage current | IGSS | 1 | 10 | nA | VGS=20 V, VDS=0 V | 2 | |
| Drain-source on-state resistance | RDS(on) | 2 | 4 | Ω | VGS=4.5 V, ID=0.25 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 1.6 | 3 | Ω | VGS=10 V, ID=0.5 A | 2 | |
| Transconductance | gfs | 0.2 | 0.36 | S | /VDS/>2/ID/RDS(on)max, ID=0.24 A | 2 | |
| Input capacitance | Ciss | 13 | 20 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 4.1 | 6 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 2 | 3 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Turn-on delay time | td(on) | 3 | 4.5 | ns | VDD=30 V, VGS=10 V, ID=0.5 A, RG=6 Ω | 3 | |
| Rise time | tr | 3.3 | 5 | ns | VDD=30 V, VGS=10 V, ID=0.5 A, RG=6 Ω | 3 | |
| Turn-off delay time | td(off) | 5.5 | 9 | ns | VDD=30 V, VGS=10 V, ID=0.5 A, RG=6 Ω | 3 | |
| Fall time | tf | 3.1 | 5 | ns | VDD=30 V, VGS=10 V, ID=0.5 A, RG=6 Ω | 3 | |
| Gate to source charge | Qgs | 0.05 | 0.1 | nC | VDD=48 V, ID=0.5 A, VGS=0 to 10 V | 3 | |
| Gate to drain charge | Qgd | 0.2 | 0.4 | nC | VDD=48 V, ID=0.5 A, VGS=0 to 10 V | 3 | |
| Gate charge total | Qg | 0.4 | 0.6 | nC | VDD=48 V, ID=0.5 A, VGS=0 to 10 V | 3 | |
| Diode continuous forward current | IS | 0.3 | A | TA=25 °C | 3 | ||
| Diode pulse current | IS,pulse | 1.2 | A | TA=25 °C | 3 | ||
| Diode forward voltage | VSD | 0.96 | 1.2 | V | VGS=0 V, IF=0.5 A, Tj=25 °C | 3 | |
| Reverse recovery time | trr | 8.5 | 13 | ns | VR=30 V, IF=0.5 A, diF/dt=100 A/µs | 3 | |
| Reverse recovery charge | Qrr | 2.4 | 4 | nC | VR=30 V, IF=0.5 A, diF/dt=100 A/µs | 3 | |
| Thermal resistance, junction - minimal footprint | RthJA | 250 | K/W | Performed on a 40x40mm2 FR4 PCB | 2 | ||
| Continuous drain current | ID | 0.3 | A | TA=25 °C | 1 | ||
| Continuous drain current | ID | 0.24 | A | TA=70 °C | 1 | ||
| Pulsed drain current | ID,pulse | 1.2 | A | TA=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 1.3 | mJ | ID=0.3 A, RGS=25 Ω | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=0.3 A, VDS=48 V, di/dt=200 A/µs, Tj,max=150 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 0.5 | W | TA=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Gate plateau voltage | Vplateau | 4 | V | VDD=48 V, ID=0.5 A, VGS=0 to 10 V | 3 |
CAD (KiCad official)
- Symbol:
2N7002H6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2n7002h6327-etched.step/2n7002h6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n7002h6327.step/2n7002h6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
035a6c7864857896, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).