component

2N7002G-AE2-R

Public Made by Adom

by adom

UTC Unisonic Tech MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors2n7002g-ae2-rfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
2n7002g-ae2-r / README.md
History Download
Ray 2n7002g-ae2-r: specified limits as data (metadata.characteristics, 27 rows from the datasheet) db650f4 9d ago

2N7002G-AE2-R

UTC Unisonic Tech · MOSFETs · SOT-23-3

2N7002G-AE2-R from UTC Unisonic Tech, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal; the datasheet gives no pin-specific limit, and the device ratings are VDSS 60 V and continuous drain current ID 300 mA.
2 G input Gate terminal; gate-source voltage is rated ±20 V continuous (40 V non-repetitive, tP < 50 µs).
3 D passive Drain terminal; drain-source voltage is rated 60 V, continuous drain current 300 mA, and pulsed drain current 800 mA.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 2
Drain-Gate Voltage (RGS ≤1MΩ) VDGR 60 V RGS ≤1MΩ 2
Gate Source Voltage Continuous VGSS 20 V Continuous 2
Gate Source Voltage Non Repetitive VGSS 40 V Non Repetitive (tP<50μs) 2
Drain Current Continuous ID 300 mA Continuous 2
Drain Current Pulsed ID 800 mA Pulsed 2
Power Dissipation PD 200 mW 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -55 150 °C 2
Junction to Ambient Thermal Resistance θJA 625 °C/W 2
Junction to Case Thermal Resistance θJC 215 °C/W 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=10μA 2
Drain-Source Leakage Current IDSS 1 μA VDS=60V, VGS =0V 2
Gate-Source Leakage Current (forward) IGSSF 100 nA VGS =20V, VDS=0V 2
Gate-Source Leakage Current (reverse) IGSSR -100 nA VGS =-20V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 1 2.1 2.5 V VGS = VDS, ID=250μA 2
Drain-Source On-Voltage VDS (ON) 0.6 3.75 V VGS = 10V, ID=300mA 2
Drain-Source On-Voltage VDS (ON) 0.375 V VGS = 5.0V, ID=50mA 2
Static Drain-Source On-Resistance RDS (ON) 7.5 Ω VGS =10V, ID=300mA 2
Input Capacitance CISS 20 50 pF VDS=25V,VGS=0V,f=1.0MHz 2
Output Capacitance COSS 11 25 pF 2
Reverse Transfer Capacitance CRSS 4 5 pF 2
Turn-On Time tON 20 nS VDD=30V, RL=150Ω, ID=200mA, VGS =10V, RGEN =25Ω 2
Turn-Off Time tOFF 20 nS VDD=30V, RL=25Ω, ID=200mA, VGS=10V, RGEN =25Ω 2
Drain-Source Diode Forward Voltage VSD 0.88 1.5 V VGS=0V, Is=300mA (Note) 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 0.8 A 2
Maximum Continuous Drain-Source Diode Forward Current IS 300 mA 2

CAD (KiCad official)

  • Symbol: 2N7002G-AE2-R
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: 2n7002g-ae2-r-etched.step / 2n7002g-ae2-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002g-ae2-r.step / 2n7002g-ae2-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (6 pp, sha256 4045a29b6f42f5c1, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF