component
2N7002E-7-F
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2N7002E-7-F
Diodes Incorporated · MOSFETs · SOT-23
2N7002E-7-F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20V continuous and ±40V pulsed (VGSS). |
| 2 | S | passive | Source of the N-channel MOSFET; the ±20V continuous gate-source rating is referenced to this terminal. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 60V (VDSS) with continuous drain current of 300mA at TA = +25°C on the 1" x 1" FR-4 board. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | 70 | V | VGS = 0V, ID = 10µA | 2 | |
| Zero Gate Voltage Drain Current @ TC = +25°C | IDSS | 1 | µA | VDS = 60V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current @ TC = +125°C | IDSS | 500 | µA | VDS = 60V, VGS = 0V | 2 | ||
| Gate-Body Leakage | IGSS | -10 | 10 | nA | VGS = ±15V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 250µA | 2 | |
| Static Drain-Source On-Resistance @ TJ = +25°C (VGS = 10V) | RDS(ON) | 1.6 | 3 | Ω | VGS = 10V, ID = 250mA | 2 | |
| Static Drain-Source On-Resistance @ TJ = +25°C (VGS = 4.5V) | RDS(ON) | 2 | 4 | Ω | VGS = 4.5V, ID = 200mA | 2 | |
| On-State Drain Current | ID(ON) | 0.8 | 1 | A | VGS = 10V, VDS = 7.5V | 2 | |
| Forward Transconductance | gFS | 80 | mS | VDS =10V, ID = 0.2A | 2 | ||
| Input Capacitance | Ciss | 22 | 50 | pF | 2 | ||
| Output Capacitance | Coss | 11 | 25 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 2 | 5 | pF | 2 | ||
| Turn-On Delay Time | tD(ON) | 7 | 20 | ns | VDD = 30V, ID = 0.2A | 2 | |
| Turn-Off Delay Time | tD(OFF) | 11 | 20 | ns | RL = 150Ω, VGEN = 10V, RGEN = 25Ω | 2 | |
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Drain-Gate Voltage | VDGR | 60 | V | RGS ≤ 1.0MΩ | 2 | ||
| Gate-Source Voltage, Continuous | VGSS | -20 | 20 | V | Continuous | 2 | |
| Gate-Source Voltage, Pulsed | VGSS | -40 | 40 | V | Pulsed | 2 | |
| Continuous Drain Current (Note 5), TA = +25°C | ID | 250 | mA | VGS = 10V, Steady State, Device mounted on FR-4 PCB with minimum recommended pad layout | 2 | ||
| Continuous Drain Current (Note 5), TA = +70°C | ID | 200 | mA | VGS = 10V, Steady State, Device mounted on FR-4 PCB with minimum recommended pad layout | 2 | ||
| Continuous Drain Current (Note 6), TA = +25°C | ID | 300 | mA | VGS = 10V, Steady State, Device mounted on 1in x 1in FR-4 PCB with high coverage 2oz. copper | 2 | ||
| Continuous Drain Current (Note 6), TA = +70°C | ID | 240 | mA | VGS = 10V, Steady State, Device mounted on 1in x 1in FR-4 PCB with high coverage 2oz. copper | 2 | ||
| Maximum Body Diode Forward Current (Note 6) | IS | 500 | mA | Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 800 | mA | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Total Power Dissipation (Note 5) | PD | 370 | mW | Device mounted on FR-4 PCB with minimum recommended pad layout | 2 | ||
| Total Power Dissipation (Note 6) | PD | 540 | mW | Device mounted on 1in x 1in FR-4 PCB with high coverage 2oz. copper | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 348 | °C/W | Device mounted on FR-4 PCB with minimum recommended pad layout | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 241 | °C/W | Device mounted on 1in x 1in FR-4 PCB with high coverage 2oz. copper | 2 | ||
| Thermal Resistance, Junction to Case (Note 6) | RθJC | 91 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
2N7002E-7-F - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2n7002e-7-f-etched.step/2n7002e-7-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n7002e-7-f.step/2n7002e-7-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (5 pp, sha256
ec2a65729fdcc229, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).