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2N7002DW-VB

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VBsemi Elec MOSFETs, SC70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N7002DW-VB

VBsemi Elec · MOSFETs · SC70-6

2N7002DW-VB from VBsemi Elec, in a SC70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, 60 V VDS rating).
2 G1 input Gate of MOSFET 1, with gate-source voltage limit of ±20 V and typical threshold of 2 V.
3 D2 passive Drain of MOSFET 2, rated 60 V VDS and 350 mA continuous at TA = 25 °C.
4 S2 passive Source of MOSFET 2 (N-channel, 60 V VDS rating).
5 G2 input Gate of MOSFET 2, with gate-source voltage limit of ±20 V and typical threshold of 2 V.
6 D1 passive Drain of MOSFET 1, rated 60 V VDS and 350 mA continuous at TA = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SC70-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 10 µA 2
Gate-Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -10 10 µA VDS = 0 V, VGS = ± 20 V 2
Gate-Body Leakage IGSS 1 µA VDS = 0 V, VGS = ± 15 V 2
Gate-Body Leakage IGSS -150 150 nA VDS = 0 V, VGS = ± 10 V 2
Gate-Body Leakage IGSS -1000 1000 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 5 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 500 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
On-State Drain Current ID(on) 800 mA VGS = 10 V, VDS = 7.5 V 2
On-State Drain Current ID(on) 500 mA VGS = 4.5 V, VDS = 10 V 2
Drain-Source On-Resistance RDS(on) 1.8 Ω VGS = 10 V, ID = 500 mA 2
Drain-Source On-Resistance RDS(on) 3 Ω VGS = 4.5 V, ID = 200 mA 2
Forward Transconductance gfs 100 mS VDS = 10 V, ID = 200 mA 2
Diode Forward Voltage VSD 1.3 V IS = 200 mA, VGS = 0 V 2
Total Gate Charge Qg 0.6 0.8 nC VDS = 10 V, VGS = 4.5 V, ID ≅ 250 mA 2
Input Capacitance Ciss 30 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 6 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 2.5 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Turn-On Time td(on) 25 ns VDD = 30 V, RL = 150 Ω, ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω 2
Turn-Off Time td(off) 35 ns VDD = 30 V, RL = 150 Ω, ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TJ = 150 °C) ID 350 mA TJ = 150 °C, TA = 25 °C 1
Continuous Drain Current ID 230 mA TA = 100 °C 1
Pulsed Drain Current IDM 900 mA 1
Power Dissipation PD 0.35 W TA = 25 °C 1
Power Dissipation PD 0.14 W TA = 100 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 350 °C/W Surface mounted on FR4 board 1

CAD (KiCad official)

  • Symbol: 2N7002DW-VB
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC70-6 (KiCad packages3D, STEP)
  • 3D model files: 2n7002dw-vb-etched.step / 2n7002dw-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002dw-vb.step / 2n7002dw-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (6 pp, sha256 bd53ce29843a4951, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF