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2N7002C

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Yangzhou Yangjie Elec Tech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N7002C

Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23(TO-236)

2N7002C from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; voltage-controlled input with VGS rated ±30 V max, threshold VGS(th) 1.0 to 2.5 V at ID=250µA.
2 S passive Source; the body diode runs from source to drain, with continuous diode current up to 350 mA.
3 D passive Drain; VDS rated 60 V max and continuous drain current 350 mA at TA=25℃.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS= 0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Zero Gate Voltage Drain Current (Tj=150℃) IDSS 100 μA VDS=60V, VGS=0V, Tj=150℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±30V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 0.7 1 Ω VGS=10V, ID=350mA 2
Static Drain-Source On-Resistance RDS(ON) 0.85 1.4 Ω VGS=4.5V, ID=200mA 2
Diode Forward Voltage VSD 1.2 V IS=350mA, VGS=0V 2
Maximum Body-Diode Continuous Current IS 350 mA 2
Drain-Source Voltage VDS 60 V TA=25℃ 1
Gate-Source Voltage VGS -30 30 V TA=25℃ 1
Drain Current ID 350 mA TA=25℃ 1
Drain Current ID 220 mA TA=100℃ 1
Pulsed Drain Current IDM 2 A TA=25℃ 1
Total Power Dissipation PD 830 mW TA=25℃ 1
Total Power Dissipation PD 330 mW TA=100℃ 1
Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient RθJA 120 150 ℃/W Steady-State 1
Gate resistance RG 20 Ω f=1MHz 2
Input Capacitance Ciss 34 pF VDS=30V, VGS=0V, f=1MHz 2
Output Capacitance Coss 6 pF VDS=30V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 2 pF VDS=30V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 1.7 nC VGS=10V, VDS=30V, ID=1A 2
Gate-Source Charge Qgs 0.57 nC VGS=10V, VDS=30V, ID=1A 2
Gate-Drain Charge Qgd 0.3 nC VGS=10V, VDS=30V, ID=1A 2
Reverse Recovery Charge Qrr 4 nC IF=1A, di/dt=100A/us 2
Reverse Recovery Time trr 14 ns IF=1A, di/dt=100A/us 2
Turn-on Delay Time tD(on) 4 ns VGS=10V, VDD=30V, ID=1A, RGEN=3Ω 2
Turn-on Rise Time tr 19 ns VGS=10V, VDD=30V, ID=1A, RGEN=3Ω 2
Turn-off Delay Time tD(off) 12 ns VGS=10V, VDD=30V, ID=1A, RGEN=3Ω 2
Turn-off fall Time tf 24 ns VGS=10V, VDD=30V, ID=1A, RGEN=3Ω 2

CAD (KiCad official)

  • Symbol: 2N7002C
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: 2n7002c-etched.step / 2n7002c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002c.step / 2n7002c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (8 pp, sha256 6ab2473e74a1d194, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF