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2N7002BKVL

Nexperia · MOSFETs · SOT-23

2N7002BKVL from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage limited to ±20 V at Tamb = 25 °C.
2 S passive Source of the MOSFET, with source current limited to 350 mA at Tamb = 25 °C.
3 D passive Drain of the MOSFET, rated for drain-source voltage up to 60 V and drain current up to 350 mA at Tamb = 25 °C with VGS = 10 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V Tamb = 25 °C 2
Gate-source voltage VGS -20 20 V Tamb = 25 °C 2
Drain current ID 350 mA VGS = 10 V; Tamb = 25 °C 2
Drain current ID 245 mA VGS = 10 V; Tamb = 100 °C 2
Peak drain current IDM 1.2 A Tamb = 25 °C; single pulse; tp ≤ 10 μs 2
Total power dissipation Ptot 370 mW Tamb = 25 °C; standard footprint [2] 3
Total power dissipation Ptot 440 mW Tamb = 25 °C; mounting pad for drain 1 cm2 [1] 3
Total power dissipation Ptot 1.2 W Tsp = 25 °C 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS 350 mA Tamb = 25 °C [1] 3
Electrostatic discharge voltage VESD 2000 V human body model [3] 3
Thermal resistance junction to ambient Rth(j-a) 295 340 K/W in free air [1] 4
Thermal resistance junction to ambient Rth(j-a) 250 285 K/W footnote [2]: FR4 PCB, mounting pad for drain 1 cm2 4
Thermal resistance junction to solder point Rth(j-sp) 105 K/W 4
Drain-source breakdown voltage V(BR)DSS 60 V ID = 10 μA; VGS = 0 V 6
Gate-source threshold voltage VGS(th) 1.1 1.6 2.1 V ID = 250 μA; VDS = VGS 6
Drain leakage current IDSS 1 μA VDS = 60 V; VGS = 0 V; Tj = 25 °C 6
Drain leakage current IDSS 10 μA VDS = 60 V; VGS = 0 V; Tj = 150 °C 6
Gate leakage current IGSS 10 μA VGS = ±20 V; VDS = 0 V 6
Drain-source on-state resistance RDSon 1.3 2 Ω VGS = 5 V; ID = 50 mA 6
Drain-source on-state resistance RDSon 1 1.6 Ω VGS = 10 V; ID = 500 mA 6
Input capacitance Ciss 33 50 pF VGS = 0 V; VDS = 10 V; f = 1 MHz 6
Total gate charge QG(tot) 0.5 0.6 nC ID = 300 mA; VDS = 30 V; VGS = 4.5 V 6
Turn-on delay time td(on) 5 10 ns VDD = 50 V; RL = 250 Ω; VGS = 10 V; RG = 6 Ω 6
Turn-off delay time td(off) 12 24 ns 6
Source-drain voltage VSD 0.47 0.75 1.1 V IS = 115 mA; VGS = 0 V 6

CAD (KiCad official)

  • Symbol: 2N7002BKVL
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2n7002bkvl-etched.step / 2n7002bkvl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002bkvl.step / 2n7002bkvl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (16 pp, sha256 f6871b60a8a08e23, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF