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2N7002AQ-7

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 15d ago
viewers 2n7002aq-7: viewers · Ray 15d ago
2n7002aq-7-etched.glb 2n7002aq-7: factory component page (tier=lcsc) · Ray 15d ago
2n7002aq-7-etched.step 2n7002aq-7: factory component page (tier=lcsc) · Ray 15d ago
2n7002aq-7-hero.glb 2n7002aq-7: hero GLB from the etched model (keeps the MPN mark) · Ray 15d ago
2n7002aq-7-hero.overlay.json Publish 0.1.0 · Ray 15d ago
2n7002aq-7.glb Publish 0.1.0 · Ray 15d ago
2n7002aq-7.kicad_mod Publish 0.1.0 · Ray 15d ago
2n7002aq-7.kicad_sym Publish 0.1.0 · Ray 15d ago
2n7002aq-7.lbr Publish 0.1.0 · Ray 15d ago
2n7002aq-7.step Publish 0.1.0 · Ray 15d ago
package.json Publish 0.1.0 · Ray 15d ago
page.json 2n7002aq-7: specified limits as data (metadata.characteristics, 27 rows from the datasheet) · Ray 10d ago
README.md 2n7002aq-7: specified limits as data (metadata.characteristics, 27 rows from the datasheet) · Ray 10d ago

2N7002AQ-7

Diodes Incorporated · MOSFETs · SOT-23

2N7002AQ-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input ESD-protected gate with a 1.2kV HBM rating, and gate-source voltage limited to ±20V (VGSS).
2 Source passive MOSFET source terminal; maximum continuous body diode forward current is 220mA (IS).
3 Drain passive MOSFET drain terminal; drain-source voltage is rated 60V (VDSS) with continuous drain current of 220mA at TA = +25°C (steady state, Note 6).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V Printed as ±20 V 2
Continuous Drain Current (Note 5) ID 180 mA Note 5, VGS=10V, steady state, TA=+25°C 2
Continuous Drain Current (Note 5) ID 130 mA Note 5, VGS=10V, steady state, TA=+85°C 2
Continuous Drain Current (Note 5) ID 115 mA Note 5, VGS=10V, steady state, TA=+100°C 2
Continuous Drain Current (Note 6) ID 220 mA Note 6, VGS=10V, steady state, TA=+25°C 2
Continuous Drain Current (Note 6) ID 160 mA Note 6, VGS=10V, steady state, TA=+85°C 2
Continuous Drain Current (Note 6) ID 140 mA Note 6, VGS=10V, steady state, TA=+100°C 2
Maximum Continuous Body Diode Forward Current (Note 6) IS 220 mA Note 6 2
Pulsed Drain Current IDM 800 mA 10µs pulse, duty cycle = 1% 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Total Power Dissipation (Note 5) PD 370 mW Note 5, FR-4 PCB, minimum recommended pad layout 2
Total Power Dissipation (Note 6) PD 540 mW Note 6, 1in x 1in FR-4 PCB, high coverage 2oz copper, single sided 2
Thermal Resistance, Junction to Ambient (Note 5) RθJA 348 °C/W Note 5, FR-4 PCB, minimum recommended pad layout 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 241 °C/W Note 6, 1in x 1in FR-4 PCB, high coverage 2oz copper, single sided 2
Thermal Resistance, Junction to Case (Note 6) RθJC 91 °C/W Note 6 2
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10µA 2
Zero Gate Voltage Drain Current @ TC = +25°C IDSS 1 µA VDS = 60V, VGS = 0V 2
Zero Gate Voltage Drain Current @ TC = +125°C IDSS 500 µA VDS = 60V, VGS = 0V 2
Gate-Body Leakage IGSS -10 10 µA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 1.2 2 V VDS = VGS, ID = 250µA 2
Static Drain-Source On-Resistance @ TJ = +25°C RDS(ON) 3.5 Ω VGS = 5.0V, ID = 0.115A 2
Static Drain-Source On-Resistance @ TJ = +25°C RDS(ON) 3 Ω VGS = 10V, ID = 0.115A 2
Static Drain-Source On-Resistance @ TJ = +125°C RDS(ON) 6 Ω VGS = 5.0V, ID = 0.115A 2
Static Drain-Source On-Resistance @ TJ = +125°C RDS(ON) 5 Ω VGS = 10V, ID = 0.115A 2
Forward Transconductance gFS 80 mS VDS = 10V, ID = 0.115A 2
Gate Resistance RG 260 400 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 2

CAD (KiCad official)

  • Symbol: 2N7002AQ-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2n7002aq-7-etched.step / 2n7002aq-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002aq-7.step / 2n7002aq-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 d7ec84b74291779d, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF