component
2N7002
Public Made by Adomby adom
Diodes Inc N-channel enhancement-mode MOSFET, SOT-23. 60 V, RDS(on) 5 Ohm, ID 210 mA. Datasheet-verified.
← Commit history
2n7002: specified limits as data (metadata.characteristics, 33 rows from the datasheet)
2 files changed
+443
README.md+40@@ -31,6 +31,46 @@ Surface-mount N-channel enhancement-mode MOSFET in a SOT-23 package, a workhorse - `2N7002-7-F` - `2N7002-13-F` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-Source Voltage, continuous | VGSS | -20 | | 20 | V | Continuous | 2 |+| Gate-Source Voltage, pulsed | VGSS | -40 | | 40 | V | Pulsed (Note 8) | 2 |+| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |+| Drain-Source Breakdown Voltage | BVDSS | 60 | 70 | | V | VGS = 0V, ID = 10µA | 2 |+| Zero Gate Voltage Drain Current @ TJ = +25°C | IDSS | | | 1 | µA | VDS = 60V, VGS = 0V | 2 |+| Zero Gate Voltage Drain Current @ TJ = +125°C | IDSS | | | 500 | µA | VDS = 60V, VGS = 0V | 2 |+| Gate-Body Leakage | IGSS | -10 | | 10 | nA | VGS = ±20V, VDS = 0V | 2 |+| Gate Threshold Voltage | VGS(TH) | 1 | | 2.5 | V | VDS = VGS, ID = 250µA | 2 |+| Static Drain-Source On-Resistance @ TJ = +25°C | RDS(ON) | | 3.2 | 7.5 | Ω | VGS = 5.0V, ID = 0.05A | 2 |+| Static Drain-Source On-Resistance @ TJ = +25°C | RDS(ON) | | 2.4 | 5 | Ω | VGS = 10V, ID = 0.5A | 2 |+| Static Drain-Source On-Resistance @ TJ = +125°C | RDS(ON) | | 4.4 | 13.5 | Ω | VGS = 10V, ID = 0.5A | 2 |+| On-State Drain Current | ID(ON) | 0.5 | 1 | | A | VGS = 10V, VDS = 7.5V | 2 |+| Forward Transconductance | gFS | 80 | | | mS | VDS = 10V, ID = 0.2A | 2 |+| Diode Forward Voltage | VSD | | 0.78 | 1.5 | V | VGS = 0V, IS = 115mA | 2 |+| Input Capacitance | Ciss | | 22 | 50 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 2 |+| Output Capacitance | Coss | | 11 | 25 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 2 | 5 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 2 |+| Drain-Source Voltage | VDSS | | | 60 | V | | 2 |+| Drain-Gate Voltage | VDGR | | | 60 | V | RGS ≤ 1.0MΩ | 2 |+| Continuous Drain Current, Note 5 (TA = +25°C) | ID | | | 170 | mA | VGS = 10V, steady state, Note 5 | 2 |+| Continuous Drain Current, Note 5 (TA = +85°C) | ID | | | 120 | mA | VGS = 10V, steady state, Note 5 | 2 |+| Continuous Drain Current, Note 5 (TA = +100°C) | ID | | | 105 | mA | VGS = 10V, steady state, Note 5 | 2 |+| Continuous Drain Current, Note 6 (TA = +25°C) | ID | | | 210 | mA | VGS = 10V, steady state, Note 6 | 2 |+| Continuous Drain Current, Note 6 (TA = +85°C) | ID | | | 150 | mA | VGS = 10V, steady state, Note 6 | 2 |+| Continuous Drain Current, Note 6 (TA = +100°C) | ID | | | 135 | mA | VGS = 10V, steady state, Note 6 | 2 |+| Maximum Continuous Body Diode Forward Current | IS | | | 0.2 | A | Continuous, Note 6 | 2 |+| Maximum Body Diode Forward Current, pulsed | IS | | | 0.5 | A | Pulsed (Note 8) | 2 |+| Pulsed Drain Current | IDM | | | 800 | mA | 10µs pulse, duty cycle = 1% | 2 |+| Total Power Dissipation, Note 5 | PD | | | 370 | mW | Note 5 | 2 |+| Total Power Dissipation, Note 6 | PD | | | 540 | mW | Note 6 | 2 |+| Thermal Resistance, Junction to Ambient, Note 5 | RθJA | | | 348 | °C/W | Note 5 | 2 |+| Thermal Resistance, Junction to Ambient, Note 6 | RθJA | | | 241 | °C/W | Note 6 | 2 |+| Thermal Resistance, Junction to Case, Note 6 | RθJC | | | 91 | °C/W | Note 6 | 2 |+ ## CAD (KiCad official) - Symbol: `Transistor_FET:2N7002`
page.json+403@@ -124,6 +124,409 @@ "Input capacitance (Ciss)": "22 pF", "Package": "SOT-23", "Body (L×W×H)": "2.9 × 1.3 × 1.15 mm"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "ff8e1c98f93c7e3a",+ "rows": [+ {+ "name": "Gate-Source Voltage, continuous",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "Continuous",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage, pulsed",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -40,+ "typ": null,+ "max": 40,+ "conditions": "Pulsed (Note 8)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "thermal",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": 70,+ "max": null,+ "conditions": "VGS = 0V, ID = 10µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current @ TJ = +25°C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 60V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current @ TJ = +125°C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "VDS = 60V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VGS = ±20V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 2.5,+ "conditions": "VDS = VGS, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance @ TJ = +25°C",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 3.2,+ "max": 7.5,+ "conditions": "VGS = 5.0V, ID = 0.05A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance @ TJ = +25°C",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.4,+ "max": 5,+ "conditions": "VGS = 10V, ID = 0.5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance @ TJ = +125°C",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 4.4,+ "max": 13.5,+ "conditions": "VGS = 10V, ID = 0.5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(ON)",+ "kind": "electrical",+ "unit": "A",+ "min": 0.5,+ "typ": 1,+ "max": null,+ "conditions": "VGS = 10V, VDS = 7.5V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "mS",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "VDS = 10V, ID = 0.2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.78,+ "max": 1.5,+ "conditions": "VGS = 0V, IS = 115mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 22,+ "max": 50,+ "conditions": "VDS = 25V, VGS = 0V, f = 1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 11,+ "max": 25,+ "conditions": "VDS = 25V, VGS = 0V, f = 1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2,+ "max": 5,+ "conditions": "VDS = 25V, VGS = 0V, f = 1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Gate Voltage",+ "symbol": "VDGR",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "RGS ≤ 1.0MΩ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, Note 5 (TA = +25°C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 170,+ "conditions": "VGS = 10V, steady state, Note 5",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, Note 5 (TA = +85°C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "VGS = 10V, steady state, Note 5",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, Note 5 (TA = +100°C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 105,+ "conditions": "VGS = 10V, steady state, Note 5",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, Note 6 (TA = +25°C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 210,+ "conditions": "VGS = 10V, steady state, Note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, Note 6 (TA = +85°C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VGS = 10V, steady state, Note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, Note 6 (TA = +100°C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 135,+ "conditions": "VGS = 10V, steady state, Note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Body Diode Forward Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.2,+ "conditions": "Continuous, Note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body Diode Forward Current, pulsed",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "Pulsed (Note 8)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 800,+ "conditions": "10µs pulse, duty cycle = 1%",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation, Note 5",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 370,+ "conditions": "Note 5",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation, Note 6",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 540,+ "conditions": "Note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient, Note 5",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 348,+ "conditions": "Note 5",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient, Note 6",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 241,+ "conditions": "Note 6",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Case, Note 6",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 91,+ "conditions": "Note 6",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "discovery_triggers": [