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2N7002-7-MS

Public Made by Adom

by adom

MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N7002-7-MS

MSKSEMI · MOSFETs · SOT-23

2N7002-7-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated ±20 V, threshold 1 to 2.5 V (1.6 V typ.) at ID=250uA, with an embedded G-S ESD protection diode (ESD protected up to 2KV).
2 S passive Source; continuous source current 0.3 A and pulsed source current 1.2 A through the body diode.
3 D passive Drain; drain-source voltage rated 60 V, continuous drain current 0.3 A (TC=25℃) and pulsed 0.8 A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Drain Current, Continuous ID 0.3 A TC=25℃ 2
Drain Current, Continuous ID 0.1 A TC=100℃ 2
Drain Current, Pulsed IDM 0.8 A 2
Power Dissipation PD 0.35 W TC=25℃ 2
Power Dissipation, Derate above 25℃ PD 0.003 W/℃ Derate above 25℃ 2
Storage Temperature Range TSTG -50 150 ℃ 2
Operating Junction Temperature Range TJ -50 150 ℃ 2
Thermal Resistance Junction to ambient RθJA 357 ℃/W 3
Drain- Source Breakdown Voltage BVDSS 60 V VGS=0V , ID=250uA 3
Drain- Source Leakage Current IDSS 1 uA VDS=60V , VGS=0V , TJ=25℃ 3
Drain- Source Leakage Current IDSS 10 uA VDS=48V , VGS=0V , TJ=125℃ 3
Gate- Source Leakage Current IGSS -10 10 uA VGS= ±20V , VDS=0V 3
Static Drain- Source On- Resistance RDS(ON) 2.2 2.8 Ω VGS=10V , ID=0.3A 3
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VGS=VDS , ID=250uA 3
Continuous Source Current IS 0.3 A VG=VD=0V , Force Current 3
Pulsed Source Current ISM 1.2 A 3
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 3
Forward Transconductance gfs 0.5 S VDS=10V , ID=0.3A 3
Total Gate Charge Qg 3.7 nC VDS=30V , VGS=10V , ID=1A 3
Gate-Source Charge Qgs 0.9 nC VDS=30V , VGS=10V , ID=1A 3
Gate-Drain Charge Qgd 0.4 nC VDS=30V , VGS=10V , ID=1A 3
Turn-On Delay Time Td(on) 3 ns VDD=30V , VGS=10V , RG=6Ω , ID=0.2A 3
Rise Time Tr 5 ns VDD=30V , VGS=10V , RG=6Ω , ID=0.2A 3
Turn-Off Delay Time Td(off) 14 ns VDD=30V , VGS=10V , RG=6Ω , ID=0.2A 3
Fall Time Tf 9 ns VDD=30V , VGS=10V , RG=6Ω , ID=0.2A 3
Input Capacitance Ciss 25.5 pF VDS=30V , VGS=0V , F=1MHz 3
Output Capacitance Coss 17 pF VDS=30V , VGS=0V , F=1MHz 3

CAD (KiCad official)

  • Symbol: 2N7002-7-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2n7002-7-ms-etched.step / 2n7002-7-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002-7-ms.step / 2n7002-7-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (6 pp, sha256 c559e1c9bc2142ad, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF