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2N7000TA

onsemi · MOSFETs · TO-92-2.54mm

2N7000TA from onsemi, in a TO-92-2.54mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the N-channel enhancement-mode MOSFET; the datasheet gives no pin-specific electrical limit for this terminal.
2 Gate input Gate control terminal of the voltage-controlled switch; the datasheet gives gate-source voltage limits of ±20 V continuous and ±40 V non-repetitive (tp < 50 µs) in the absolute maximum ratings on page 3.
3 Drain passive Drain terminal of the switch; the 2N7000 drain-to-source voltage is rated at 60 V and maximum continuous drain current at 200 mA per the ratings table on page 3.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92-2.54mm
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 60 V 3
Drain-Gate Voltage VDGR 60 V RGS ≤ 1 M 3
Gate-Source Voltage - Continuous VGSS -20 20 V Continuous 3
Gate-Source Voltage - Non Repetitive VGSS -40 40 V tp < 50 µs 3
Maximum Drain Current - Continuous ID 200 mA 3
Maximum Drain Current - Pulsed ID 500 mA 3
Maximum Power Dissipation PD 400 mW 3
Maximum Power Dissipation derating PD 3.2 mW/°C Derated above 25°C 3
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 3
Maximum Lead Temperature for Soldering Purposes TL 300 °C 1/16-inch from Case for 10 Seconds 3
Thermal Resistance, Junction to Ambient RθJA 312.5 °C/W 3
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0 V, ID = 10 µA 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 48 V, VGS = 0 V (2N7000) 3
Zero Gate Voltage Drain Current at TC=125°C IDSS 1 mA VDS = 48 V, VGS = 0 V, TC = 125°C (2N7000) 3
Gate - Body Leakage, Forward IGSSF 10 nA VGS = 15 V, VDS = 0 V (2N7000) 3
Gate - Body Leakage, Reverse IGSSR -10 nA VGS = -15 V, VDS = 0 V (2N7000) 3
Gate Threshold Voltage VGS(th) 0.8 2.1 3 V VDS = VGS, ID = 1 mA (2N7000) 4
Static Drain-Source On-Resistance RDS(ON) 1.2 5 Ω VGS = 10 V, ID = 500 mA (2N7000) 4
Static Drain-Source On-Resistance at TC=125°C RDS(ON) 1.9 9 Ω VGS = 10 V, ID = 500 mA, TC = 125°C (2N7000) 4
Static Drain-Source On-Resistance RDS(ON) 1.8 5.3 Ω VGS = 4.5 V, ID = 75 mA (2N7000) 4
Drain-Source On-Voltage VDS(ON) 0.6 2.5 V VGS = 10 V, ID = 500 mA (2N7000) 4
Drain-Source On-Voltage VDS(ON) 0.14 0.4 V VGS = 4.5 V, ID = 75 mA (2N7000) 4
On-State Drain Current ID(ON) 75 600 mA VGS = 4.5 V, VDS = 10 V (2N7000) 4
Forward Transconductance gFS 100 320 mS VDS = 10 V, ID = 200 mA (2N7000) 4
Input Capacitance Ciss 20 50 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz (All) 5
Output Capacitance Coss 11 25 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz (All) 5
Reverse Transfer Capacitance Crss 4 5 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz (All) 5
Turn-On Time ton 10 ns VDD = 15 V, RL = 25 Ω, ID = 500 mA, VGS = 10 V, RGEN = 25 Ω (2N7000) 5
Turn-Off Time toff 10 ns VDD = 15 V, RL = 25 Ω, ID = 500 mA, VGS = 10 V, RGEN = 25 Ω (2N7000) 5

CAD (KiCad official)

  • Symbol: 2N7000TA
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-2.54mm (KiCad packages3D, STEP)
  • 3D model files: 2n7000ta-etched.step / 2n7000ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7000ta.step / 2n7000ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 57aa9e47dd78887e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF