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2N7000-TA

Changjing · MOSFETs · TO-92

2N7000-TA from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SOURCE passive Source of the N-channel MOSFET; the body diode runs from source to drain, and the device is rated for 60 V VDS and 0.2 A continuous drain current.
2 GATE input Gate of the N-channel MOSFET; gate-threshold voltage is 0.8 V min to 3 V max at VDS=VGS, ID=1mA, and gate-body leakage is ±10 nA max at VGS=±15 V.
3 DRAIN passive Drain of the N-channel MOSFET; breakdown voltage is 60 V min, and the maximum continuous drain current is 0.2 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-92
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: 2N7000-TA
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 2n7000-ta-etched.step / 2n7000-ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7000-ta.step / 2n7000-ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 cd7b62847a817a5b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF