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2N6718G-B-AB3-R

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UTC Unisonic Tech Bipolar (BJT), SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N6718G-B-AB3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-89-3

2N6718G-B-AB3-R from UTC Unisonic Tech, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the 2N6718 NPN transistor, pin 1 on SOT-89 per the ordering-table pin assignment (B-C-E); VEBO is rated 5 V absolute maximum between emitter and base.
2 C passive Collector terminal of the 2N6718 NPN transistor, pin 2 on SOT-89; device absolute maximums are VCBO 100 V, VCEO 100 V and continuous IC 1 A.
3 E passive Emitter terminal of the 2N6718 NPN transistor, pin 3 on SOT-89; emitter-base breakdown is specified at 5 V minimum/typical per the electrical characteristics table.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-89-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 100 V 2
Collector-Emitter Voltage VCEO 100 V 2
Emitter-Base Voltage VEBO 5 V 2
Collector Current (Continue) IC 1 A 2
Collector Current (Pulse) IC 2 A 2
Total Power Dissipation, SOT-89 PD 1 W Note 2: device mounted on FR-4 PCB, 2oz copper, 1 inch square copper plate 2
Junction Temperature TJ 150 °C 2
Operating Temperature TOPR -40 125 °C 2
Storage Temperature TSTG -55 150 °C 2
Collector-Base Breakdown Voltage BVCBO 100 V IC=100uA 2
Collector-Emitter Breakdown Voltage BVCEO 100 V IC=1mA 2
Emitter-Base Breakdown Voltage BVEBO 5 V IE=10A 2
Collector-Emitter Saturation Voltage VCE(SAT) 350 mV IC=350mA, IB=35mA 2
Collector Cut-Off Current ICBO 100 nA VCB=80V 2
DC Current Gain hFE1 hFE1 80 VCE=1V, IC=50mA 2
DC Current Gain hFE2, rank B hFE2 95 300 2
DC Current Gain hFE3 hFE3 20 VCE=1V, IC=500mA 2
Current Gain - Bandwidth Product fT 50 MHz VCE=10V, IC=50mA, f=100MHz 2
Output Capacitance Cob 20 pF VCB=10V, IE=0, f=1MHz 2
Thermal Resistance Junction to Ambient, SOT-89 θJA 125 °C/W 2
Thermal Resistance Junction to Case, SOT-89 θJC 70 °C/W 2

CAD (KiCad official)

  • Symbol: 2N6718G-B-AB3-R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3 (KiCad packages3D, STEP)
  • 3D model files: 2n6718g-b-ab3-r-etched.step / 2n6718g-b-ab3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n6718g-b-ab3-r.step / 2n6718g-b-ab3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256 1c81f489035e47bb, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF