component

2N65G

Public Made by Adom

by adom

UMW MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors2n65gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 6d ago
viewers 2n65g: viewers · Ray 6d ago
2n65g-etched.glb Publish 0.1.0 · Ray 6d ago
2n65g-etched.step 2n65g: factory component page (tier=lcsc) · Ray 6d ago
2n65g-hero.glb 2n65g: hero GLB from the etched model (keeps the MPN mark) · Ray 6d ago
2n65g-hero.overlay.json Publish 0.1.0 · Ray 6d ago
2n65g.glb Publish 0.1.0 · Ray 6d ago
2n65g.kicad_mod Publish 0.1.0 · Ray 6d ago
2n65g.kicad_sym Publish 0.1.0 · Ray 6d ago
2n65g.lbr Publish 0.1.0 · Ray 6d ago
2n65g.step Publish 0.1.0 · Ray 6d ago
package.json Publish 0.1.0 · Ray 6d ago
page.json Set visibility: public · Ray 6d ago
README.md Publish 0.1.0 · Ray 6d ago

2N65G

UMW · MOSFETs · SOT-223

2N65G from UMW, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal; the gate-source voltage is rated ±30 V (absolute maximum).
2 D passive DRAIN terminal; continuous drain current is 2 A at TC=25°C and 1.25 A at TC=100°C, limited by maximum junction temperature.
3 S passive SOURCE terminal; the drain-source voltage is rated 650 V (absolute maximum) relative to this pin.

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 650 V 1
Gate-source Voltage VGS -30 30 V 1
Continuous Drain Current ID 2 A TC=25°C 1
Continuous Drain Current ID 1.25 A TC=100°C 1
Drain Current Pulsed IDM 8 A 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Single Pulse Avalanche Energy EAS 120 mJ Starting TJ=25°C, VDD=50V, L=56mH, RG=25Ω, IAS=2A (note ②) 1
Drain-source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250µA 3
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.6 V/°C ID=250µA, referenced to 25°C 3
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250µA 3
Gate-body Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0 3
Static Drain-source On Resistance RDS(ON) 4.5 5.5 Ω VGS=10V, ID=1A 3
Input Capacitance Ciss 311 pF VGS=0V, VDS=25V, f=1MHz 3
Turn-Off Delay Time tD(off) 24 ns VDD=300V, ID=2A, RG=25Ω 3
Total Gate Charge Qg 14.5 nC ID=2A, VDS=520V, VGS=10V 3
Gate-to-Source Charge Qgs 1.8 nC ID=2A, VDS=520V, VGS=10V 3
Gate-to-Drain Charge Qgd 8.3 nC ID=2A, VDS=520V, VGS=10V 3
Continuous Diode Forward Current IS 2 A 3
Diode Forward Voltage VSD 1.4 V TJ=25°C, IS=2A, VGS=0V 3

CAD (KiCad official)

  • Symbol: 2N65G
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: 2n65g-etched.step / 2n65g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n65g.step / 2n65g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (13 pp, sha256 dfc2217b458522c6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF