component
2N65G-TM3-T
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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2N65G-TM3-T
UTC Unisonic Tech · MOSFETs · TO-251
2N65G-TM3-T from UTC Unisonic Tech, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET, with a gate-source voltage limit of ±30 V (VGSS) in the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated for 650 V drain-source voltage (VDSS) and 2.0 A continuous drain current (ID). |
| 3 | Source | passive | Source terminal of the MOSFET, which is the reference for the ±30 V gate-source voltage rating (VGSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | TC = 25°C | 3 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC = 25°C | 3 | |
| Avalanche Current (repetitive) | IAR | 2 | A | Note 2: repetitive, pulse width limited by TJ | 3 | ||
| Drain Current Continuous | ID | 2 | A | TC = 25°C | 3 | ||
| Pulsed Drain Current | IDM | 8 | A | Note 2: pulse width limited by TJ | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 140 | mJ | Note 3: L=64mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ = 25°C | 3 | ||
| Avalanche Energy Repetitive | EAR | 4.5 | mJ | Note 2: repetitive, pulse width limited by TJ | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 4: ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C | 3 | ||
| Power Dissipation (TO-251/TO-251L and TO-251S/TO-252 group) | PD | 28 | W | TC = 25°C; TO-251/TO-251L, TO-251S/TO-252 (TO-252D also listed in same row group) | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Operating Temperature | TOPR | -55 | 150 | °C | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0V, ID = 250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = 650V, VGS = 0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30V, VDS = 0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 3.9 | 5 | Ω | VGS = 10V, ID = 1.0A | 4 | |
| Input Capacitance | CISS | 320 | 370 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 4 | |
| Output Capacitance | COSS | 40 | 50 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 4 | |
| Reverse Transfer Capacitance | CRSS | 9 | 12 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 4 | |
| Total Gate Charge | QG | 45 | 55 | nC | VDS = 520V, VGS = 10V, ID = 2.4A (Note 1, 2) | 4 | |
| Turn-On Delay Time | tD(ON) | 35 | 50 | ns | VDD = 325V, ID = 2.4A, RG = 25Ω (Note 1, 2) | 4 | |
| Turn-On Rise Time | tR | 40 | 60 | ns | VDD = 325V, ID = 2.4A, RG = 25Ω (Note 1, 2) | 4 | |
| Turn-Off Delay Time | tD(OFF) | 130 | 160 | ns | VDD = 325V, ID = 2.4A, RG = 25Ω (Note 1, 2) | 4 | |
| Turn-Off Fall Time | tF | 40 | 60 | ns | VDD = 325V, ID = 2.4A, RG = 25Ω (Note 1, 2) | 4 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 2 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 8 | A | 4 | |||
| Junction to Ambient (TO-251/TO-251L, TO-251S/TO-252, TO-252D) | θJA | 110 | °C/W | TO-251/TO-251L, TO-251S/TO-252, TO-252D | 3 | ||
| Junction to Case (TO-251/TO-251L, TO-251S/TO-252, TO-252D) | θJC | 4.53 | °C/W | TO-251/TO-251L, TO-251S/TO-252, TO-252D | 3 |
CAD (KiCad official)
- Symbol:
2N65G-TM3-T - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
2n65g-tm3-t-etched.step/2n65g-tm3-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n65g-tm3-t.step/2n65g-tm3-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (7 pp, sha256
560ed79c97ca0a89, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).