main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8h ago
viewers 2n65g-tm3-t: viewers · Ray 8h ago
2n65g-tm3-t-etched.glb Publish 0.1.0 · Ray 8h ago
2n65g-tm3-t-etched.step 2n65g-tm3-t: factory component page (tier=lcsc) · Ray 8h ago
2n65g-tm3-t-hero.glb 2n65g-tm3-t: hero GLB from the etched model (keeps the MPN mark) · Ray 8h ago
2n65g-tm3-t-hero.overlay.json Publish 0.1.0 · Ray 8h ago
2n65g-tm3-t.glb Publish 0.1.0 · Ray 8h ago
2n65g-tm3-t.kicad_mod Publish 0.1.0 · Ray 8h ago
2n65g-tm3-t.kicad_sym Publish 0.1.0 · Ray 8h ago
2n65g-tm3-t.lbr Publish 0.1.0 · Ray 8h ago
2n65g-tm3-t.step Publish 0.1.0 · Ray 8h ago
package.json Publish 0.1.0 · Ray 8h ago
page.json Set visibility: public · Ray 8h ago
README.md Publish 0.1.0 · Ray 8h ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 8h ago

2N65G-TM3-T

UTC Unisonic Tech · MOSFETs · TO-251

2N65G-TM3-T from UTC Unisonic Tech, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET, with a gate-source voltage limit of ±30 V (VGSS) in the absolute maximum ratings.
2 Drain passive Drain terminal of the MOSFET, rated for 650 V drain-source voltage (VDSS) and 2.0 A continuous drain current (ID).
3 Source passive Source terminal of the MOSFET, which is the reference for the ±30 V gate-source voltage rating (VGSS).

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package TO-251
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V TC = 25°C 3
Gate-Source Voltage VGSS -30 30 V TC = 25°C 3
Avalanche Current (repetitive) IAR 2 A Note 2: repetitive, pulse width limited by TJ 3
Drain Current Continuous ID 2 A TC = 25°C 3
Pulsed Drain Current IDM 8 A Note 2: pulse width limited by TJ 3
Avalanche Energy Single Pulsed EAS 140 mJ Note 3: L=64mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ = 25°C 3
Avalanche Energy Repetitive EAR 4.5 mJ Note 2: repetitive, pulse width limited by TJ 3
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 4: ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 3
Power Dissipation (TO-251/TO-251L and TO-251S/TO-252 group) PD 28 W TC = 25°C; TO-251/TO-251L, TO-251S/TO-252 (TO-252D also listed in same row group) 3
Junction Temperature TJ 150 °C 3
Operating Temperature TOPR -55 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0V, ID = 250μA 4
Drain-Source Leakage Current IDSS 10 μA VDS = 650V, VGS = 0V 4
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30V, VDS = 0V 4
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30V, VDS = 0V 4
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 4
Static Drain-Source On-State Resistance RDS(ON) 3.9 5 Ω VGS = 10V, ID = 1.0A 4
Input Capacitance CISS 320 370 pF VDS = 25V, VGS = 0V, f = 1MHz 4
Output Capacitance COSS 40 50 pF VDS = 25V, VGS = 0V, f = 1MHz 4
Reverse Transfer Capacitance CRSS 9 12 pF VDS = 25V, VGS = 0V, f = 1MHz 4
Total Gate Charge QG 45 55 nC VDS = 520V, VGS = 10V, ID = 2.4A (Note 1, 2) 4
Turn-On Delay Time tD(ON) 35 50 ns VDD = 325V, ID = 2.4A, RG = 25Ω (Note 1, 2) 4
Turn-On Rise Time tR 40 60 ns VDD = 325V, ID = 2.4A, RG = 25Ω (Note 1, 2) 4
Turn-Off Delay Time tD(OFF) 130 160 ns VDD = 325V, ID = 2.4A, RG = 25Ω (Note 1, 2) 4
Turn-Off Fall Time tF 40 60 ns VDD = 325V, ID = 2.4A, RG = 25Ω (Note 1, 2) 4
Maximum Continuous Drain-Source Diode Forward Current IS 2 A 4
Maximum Pulsed Drain-Source Diode Forward Current ISM 8 A 4
Junction to Ambient (TO-251/TO-251L, TO-251S/TO-252, TO-252D) θJA 110 °C/W TO-251/TO-251L, TO-251S/TO-252, TO-252D 3
Junction to Case (TO-251/TO-251L, TO-251S/TO-252, TO-252D) θJC 4.53 °C/W TO-251/TO-251L, TO-251S/TO-252, TO-252D 3

CAD (KiCad official)

  • Symbol: 2N65G-TM3-T
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: 2n65g-tm3-t-etched.step / 2n65g-tm3-t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n65g-tm3-t.step / 2n65g-tm3-t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (7 pp, sha256 560ed79c97ca0a89, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF