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docs 2n60g: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 8d ago
viewers 2n60g: viewers · Ray 15d ago
2n60g-etched.glb 2n60g: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 8d ago
2n60g-etched.step 2n60g: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 8d ago
2n60g-hero.glb 2n60g: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 8d ago
2n60g-hero.overlay.json 2n60g: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 8d ago
2n60g.glb Publish 0.1.0 · Ray 15d ago
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package.json 2n60g: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 8d ago
page.json 2n60g: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 8d ago
README.md 2n60g: specified limits as data (metadata.characteristics, 18 rows from the datasheet) · Ray 9d ago

2N60G

UMW · MOSFETs · SOT-223

2N60G from UMW, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal; gate-source voltage is rated at ±30 V (VGS), per the absolute maximum ratings.
2 D passive DRAIN terminal; drain-source voltage is rated at 600 V (VDS) with continuous drain current of 2 A at TC=25°C.
3 S passive SOURCE terminal; the reference for the gate-source voltage rating of ±30 V (VGS).

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 600 V 1
Gate-source Voltage VGS -30 30 V 1
Continuous Drain Current ID 2 A TC=25°C 1
Continuous Drain Current ID 1.25 A TC=100°C 1
Drain Current Pulsed IDM 8 A 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Single Pulse Avalanche Energy EAS 120 mJ 1
Drain-source Breakdown Voltage BVDSS 600 V VGS=0V, ID=250µA 3
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.6 V/°C ID=250µA, Referenced to 25°C 3
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250µA 3
Drain-source Leakage Current IDSS 1 µA VDS=600V, VGS=0V, TJ=25°C 3
Drain-source Leakage Current IDSS 10 µA VDS=480V, VGS=0V, TJ=125°C 3
Gate-body Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0 3
Static Drain-source On Resistance RDS(ON) 4.5 Ω VGS=10V, ID=1A 3
Continuous Diode Forward Current IS 2 A 3
Diode Forward Voltage VSD 1.4 V TJ=25°C, IS=2A, VGS=0V 3
Input capacitance Ciss 320 pF VGS=0V, VDS=25V, f=1MHz 3

CAD (KiCad official)

  • Symbol: 2N60G
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: 2n60g-etched.step / 2n60g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n60g.step / 2n60g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 0fa41bfb31a83114, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF