main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 3d ago
viewers 2n60g-tn3-r: viewers · Ray 3d ago
2n60g-tn3-r-etched.glb Publish 0.1.0 · Ray 3d ago
2n60g-tn3-r-etched.step 2n60g-tn3-r: factory component page (tier=mfr) · Ray 3d ago
2n60g-tn3-r-hero.glb 2n60g-tn3-r: hero GLB from the etched model (keeps the MPN mark) · Ray 3d ago
2n60g-tn3-r-hero.overlay.json Publish 0.1.0 · Ray 3d ago
2n60g-tn3-r.glb Publish 0.1.0 · Ray 3d ago
2n60g-tn3-r.kicad_mod Publish 0.1.0 · Ray 3d ago
2n60g-tn3-r.kicad_sym Publish 0.1.0 · Ray 3d ago
2n60g-tn3-r.lbr Publish 0.1.0 · Ray 3d ago
2n60g-tn3-r.step Publish 0.1.0 · Ray 3d ago
package.json Publish 0.1.0 · Ray 3d ago
page.json Set visibility: public · Ray 3d ago
README.md Publish 0.1.0 · Ray 3d ago

2N60G-TN3-R

UTC(Unisonic Tech) · MOSFETs · TO-252

2N60G-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; VGSS rated ±30 V, with RDS(ON) ≤ 5.0 Ω at VGS = 10 V and ID = 1.0 A.
2 D passive Drain; VDSS 600 V, continuous drain current 2.0 A and pulsed 8.0 A.
3 S passive Source; connected to the body diode with continuous drain-source current IS of 2.0 A.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 600 V VGS = 0V, ID = 250μA 4
Drain-Source Leakage Current IDSS 10 μA VDS = 600V, VGS = 0V 4
Drain-Source Leakage Current IDSS 100 μA VDS = 480V, TC = 125°С 4
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30V, VDS = 0V 4
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30V, VDS = 0V 4
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 4
Static Drain-Source On-State Resistance RDS(ON) 3.6 5 Ω VGS = 10V, ID =1.0A 4
Input Capacitance CISS 300 350 pF VDS =25V, VGS =0V, f =1MHz 4
Output Capacitance COSS 45 50 pF VDS =25V, VGS =0V, f =1MHz 4
Reverse Transfer Capacitance CRSS 10 13 pF VDS =25V, VGS =0V, f =1MHz 4
Total Gate Charge QG 40 50 nC VDS=480V, VGS=10V, ID=2.4A (Note 1, 2) 4
Turn-On Delay Time tD(ON) 40 60 ns VDD =300V, ID =2.4A, RG=25Ω (Note 1, 2) 4
Turn-On Rise Time tR 35 55 ns VDD =300V, ID =2.4A, RG=25Ω (Note 1, 2) 4
Turn-Off Delay Time tD(OFF) 90 120 ns VDD =300V, ID =2.4A, RG=25Ω (Note 1, 2) 4
Turn-Off Fall Time tF 50 60 ns VDD =300V, ID =2.4A, RG=25Ω (Note 1, 2) 4
Continuous Drain-Source Current IS 2 A 4
Pulsed Drain-Source Current ISM 8 A 4
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, ISD = 2.0A 4
Gate-Source Charge QGS 4.2 nC VDS=480V, VGS=10V, ID=2.4A (Note 1, 2) 4
Gate-Drain Charge QGD 8.4 nC VDS=480V, VGS=10V, ID=2.4A (Note 1, 2) 4
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.4 V/°С ID=250μA, Referenced to 25°C 4
Reverse Recovery Time trr 180 ns VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs (Note 1) 4
Reverse Recovery Charge Qrr 0.72 μC VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs (Note 1) 4
Drain-Source Voltage VDSS 600 V TC = 25°С 3
Gate-Source Voltage VGSS -30 30 V TC = 25°С 3
Avalanche Current IAR 2 A Note 2, TC = 25°С 3
Drain Current Continuous ID 2 A TC = 25°С 3
Drain Current Pulsed IDM 8 A Note 2, TC = 25°С 3
Avalanche Energy Single Pulsed EAS 140 mJ Note 3, TC = 25°С 3
Avalanche Energy Repetitive EAR 4.5 mJ Note 2, TC = 25°С 3
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 4, TC = 25°С 3
Power Dissipation PD 44 W TC = 25°С, TO-252 3
Junction Temperature TJ 150 °С 3
Operating Temperature TOPR -55 150 °С 3
Storage Temperature TSTG -55 150 °С 3
Junction to Ambient Thermal Resistance θJA 100 °С/W TO-252 3
Junction to Case Thermal Resistance θJC 2.87 °С/W TO-252 3

CAD (KiCad official)

  • Symbol: 2N60G-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 2n60g-tn3-r-etched.step / 2n60g-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n60g-tn3-r.step / 2n60g-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (7 pp, sha256 a9fc8a2fe1ce237b, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF