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2N5551U

Public Made by Adom

by adom

CBI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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2N5551U

CBI · Bipolar (BJT) · SOT-89

2N5551U from CBI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; emitter-base voltage VEBO max 6 V and V(BR)EBO min 6 V at IE = 10 µA.
2 C passive Collector (also the SOT-89 tab); VCEO 160 V, VCBO 180 V, IC max 600 mA, Ptot 500 mW.
3 E passive Emitter of the NPN transistor; Tj max 150 °C, storage temperature -55 to +150 °C.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain at VCE = 5 V, IC = 1 mA hFE 80 VCE = 5 V, IC = 1 mA 1
DC Current Gain at VCE = 5 V, IC = 10 mA hFE 80 250 VCE = 5 V, IC = 10 mA 1
DC Current Gain at VCE = 5 V, IC = 50 mA hFE 30 VCE = 5 V, IC = 50 mA 1
Collector Base Cutoff Current ICBO 50 nA VCB = 120 V 1
Emitter Base Cutoff Current IEBO 50 nA VEB = 4 V 1
Collector Base Breakdown Voltage V(BR)CBO 180 V IC = 100 µA 1
Collector Emitter Breakdown Voltage V(BR)CEO 160 V IC = 1 mA 1
Emitter Base Breakdown Voltage V(BR)EBO 6 V IE = 10 µA 1
Collector Emitter Saturation Voltage VCE(sat) 0.15 V IC = 10 mA, IB = 1 mA 1
Collector Emitter Saturation Voltage VCE(sat) 0.2 V IC = 50 mA, IB = 5 mA 1
Base Emitter Saturation Voltage VBE(sat) 1 V IC = 10 mA, IB = 1 mA 1
Gain Bandwidth Product fT 100 300 MHz VCE = 10 V, IC = 10 mA, f = 100 MHz 1
Collector Output Capacitance Cob 6 pF VCB = 10 V, f = 1 MHz 1
Collector Base Voltage VCBO 180 V 1
Collector Emitter Voltage VCEO 160 V 1
Emitter Base Voltage VEBO 6 V 1
Collector Current IC 600 mA 1
Power Dissipation Ptot 500 mW 1
Junction Temperature Tj 150 °C 1
Storage Temperature Range Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: 2N5551U
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2n5551u-etched.step / 2n5551u-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n5551u.step / 2n5551u.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 9f51f890698ccebc, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF