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2N5551G-B-AB3-R

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UTC Unisonic Tech Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N5551G-B-AB3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-89

2N5551G-B-AB3-R from UTC Unisonic Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN transistor; the datasheet gives the emitter-base limit VEBO of 6 V and the base-emitter saturation voltage VBE(SAT) of 1 V at IC=50mA, IB=5mA.
2 C passive Collector terminal of the NPN transistor, rated for a collector-emitter voltage VCEO of 160 V, collector-base voltage VCBO of 180 V, and collector current IC of 600 mA; SOT-89 collector dissipation PC is 500 mW.
3 E passive Emitter terminal of the NPN transistor, rated for an emitter-base voltage VEBO of 6 V.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 180 V 2
Collector-Emitter Voltage VCEO 160 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Dissipation (SOT-89) PC 500 mW 2
Collector Current IC 600 mA 2
Junction Temperature TJ 150 C 2
Storage Temperature TSTG -55 150 C 2
Collector-Base Breakdown Voltage BVCBO 180 V IC=100μA, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO 160 V IC=1mA, IB=0 2
Emitter-Base Breakdown Voltage BVEBO 6 V IE=10A, IC=0 2
Collector Cut-off Current ICBO 50 nA VCB=120V, IE=0 2
Emitter Cut-off Current IEBO 50 nA VBE=4V, IC=0 2
DC Current Gain hFE1 hFE1 80 VCE=5V, IC=1mA 2
DC Current Gain hFE2 hFE2 80 160 400 VCE=5V, IC=10mA 2
DC Current Gain hFE2 (rank B, per classification table) hFE2 150 240 2
DC Current Gain hFE3 hFE3 80 VCE=5V, IC=50mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.15 V IC=10mA, IB=1mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.2 V IC=50mA, IB=5mA 2
Base-Emitter Saturation Voltage VBE(SAT) 1 V IC=10mA, IB=1mA 2
Current Gain Bandwidth Product fT 100 300 MHz VCE=10V, IC=10mA, f=100MHz 2
Output Capacitance COB 6 pF VCB=10V, IE=0, f=1MHz 2
Noise Figure NF 8 dB IC=0.25mA, VCE=5V, RS=1kΩ, f=10Hz ~ 15.7kHz 2

CAD (KiCad official)

  • Symbol: 2N5551G-B-AB3-R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2n5551g-b-ab3-r-etched.step / 2n5551g-b-ab3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n5551g-b-ab3-r.step / 2n5551g-b-ab3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256 040b8b73952c79ce, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF