component
2N5551
Public Made by Adomby adom
RUILON Shenzhen Ruilongyuan Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2n5551: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -21,6 +21,38 @@ | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Breakdown Voltage | V(BR)CEO | 160 | | | V | IC = 1.0 mA, IB = 0 | 2 |+| Collector-Base Breakdown Voltage | V(BR)CBO | 180 | | | V | IC = 100µA, IE = 0 | 2 |+| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | | | V | IE = 10 µA, IC = 0 | 2 |+| Collector Cutoff Current | ICBO | | | 50 | nA | VCB = 120 V, IE = 0 | 2 |+| Collector Cutoff Current | ICBO | | | 50 | µA | VCB = 120 V, IE = 0, TA = 100°C | 2 |+| Emitter Cutoff Current | IEBO | | | 50 | nA | VEB = 4.0 V, IC = 0 | 2 |+| DC Current Gain | HFE | 80 | | | | IC = 1.0 mA, VCE = 5.0 V | 2 |+| DC Current Gain | HFE | 80 | | 250 | | IC = 10 mA, VCE = 5.0 V | 2 |+| DC Current Gain | HFE | 30 | | | | IC = 50 mA, VCE = 5.0 V | 2 |+| Collector-Emitter Saturation Voltage | VCE(S) | | | 0.2 | V | IC = 10 mA, IB = 1.0 mA | 2 |+| Collector-Emitter Saturation Voltage | VCE(S) | | | 0.15 | V | IC = 50 mA, IB = 5.0 mA | 2 |+| Base-Emitter Saturation Voltage | VBE(S) | | | 1 | V | IC = 10 mA, IB = 1.0 mA | 2 |+| Collector Emitter Cut-off Current | ICES | | | 50 | nA | VCB = 10 V | 2 |+| Collector Emitter Cut-off Current | ICES | | | 100 | nA | VCB = 75 V | 2 |+| Collector-Emitter Voltage | VCEO | | | 160 | V | | 1 |+| Collector-Base Voltage | VCBO | | | 180 | V | | 1 |+| Emitter-Base Voltage | VEBO | | | 6 | V | | 1 |+| Collector Current - Continuous | IC | | | 600 | mA | | 1 |+| Junction and Storage Temperature | TJ,Tstg | -55 | | 150 | ℃ | | 1 |+| Total Device Dissipation, FR-5 Board | PD | | | 225 | mW | FR-5 board (Note 1), TA = 25ºC | 1 |+| Derate above 25ºC, FR-5 Board | | | 1.8 | | mW/℃ | FR-5 board, above 25ºC | 1 |+| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RΘJA | | 556 | | ℃/W | FR-5 board (Note 1) | 1 |+| Total Device Dissipation, Alumina Substrate | PD | | | 300 | mW | Alumina substrate (Note 2), TA = 25ºC | 1 |+| Derate above 25ºC, Alumina Substrate | | | 2.4 | | mW/℃ | Alumina substrate, above 25ºC | 1 |+| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RΘJA | | 417 | | ℃/W | Alumina substrate (Note 2) | 1 |+ ## CAD (KiCad official) - Symbol: `2N5551`
page.json+308−1@@ -150,6 +150,313 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "b5cf0a9a4c572402",+ "rows": [+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 160,+ "typ": null,+ "max": null,+ "conditions": "IC = 1.0 mA, IB = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": 180,+ "typ": null,+ "max": null,+ "conditions": "IC = 100µA, IE = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": 6,+ "typ": null,+ "max": null,+ "conditions": "IE = 10 µA, IC = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VCB = 120 V, IE = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VCB = 120 V, IE = 0, TA = 100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter Cutoff Current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VEB = 4.0 V, IC = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "HFE",+ "kind": "electrical",+ "unit": "",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "IC = 1.0 mA, VCE = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "HFE",+ "kind": "electrical",+ "unit": "",+ "min": 80,+ "typ": null,+ "max": 250,+ "conditions": "IC = 10 mA, VCE = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "HFE",+ "kind": "electrical",+ "unit": "",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "IC = 50 mA, VCE = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(S)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.2,+ "conditions": "IC = 10 mA, IB = 1.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(S)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.15,+ "conditions": "IC = 50 mA, IB = 5.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(S)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "IC = 10 mA, IB = 1.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Emitter Cut-off Current",+ "symbol": "ICES",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VCB = 10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Emitter Cut-off Current",+ "symbol": "ICES",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCB = 75 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ,Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, FR-5 Board",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "FR-5 board (Note 1), TA = 25ºC",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25ºC, FR-5 Board",+ "symbol": "",+ "kind": "thermal",+ "unit": "mW/℃",+ "min": null,+ "typ": 1.8,+ "max": null,+ "conditions": "FR-5 board, above 25ºC",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient, FR-5 Board",+ "symbol": "RΘJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 556,+ "max": null,+ "conditions": "FR-5 board (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, Alumina Substrate",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Alumina substrate (Note 2), TA = 25ºC",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25ºC, Alumina Substrate",+ "symbol": "",+ "kind": "thermal",+ "unit": "mW/℃",+ "min": null,+ "typ": 2.4,+ "max": null,+ "conditions": "Alumina substrate, above 25ºC",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient, Alumina Substrate",+ "symbol": "RΘJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 417,+ "max": null,+ "conditions": "Alumina substrate (Note 2)",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +498,4 @@ "visibility": { "public": true }-}+}