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2N5551

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RUILON Shenzhen Ruilongyuan Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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2N5551

RUILON Shenzhen Ruilongyuan Elec · Bipolar (BJT) · SOT-23

2N5551 from RUILON Shenzhen Ruilongyuan Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the transistor; the datasheet limits for the device are VEBO 6 V (emitter-base) and continuous collector current IC 600 mA.
2 EMITTER passive Emitter terminal; the datasheet gives an emitter-base breakdown voltage V(BR)EBO minimum of 6 V at IE = 10 µA.
3 COLLECTOR passive Collector terminal; the datasheet limits are VCEO 160 V (collector-emitter) and continuous collector current IC 600 mA.

Key specifications

Parameter Value
Manufacturer RUILON Shenzhen Ruilongyuan Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 160 V IC = 1.0 mA, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 180 V IC = 100µA, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE = 10 µA, IC = 0 2
Collector Cutoff Current ICBO 50 nA VCB = 120 V, IE = 0 2
Collector Cutoff Current ICBO 50 µA VCB = 120 V, IE = 0, TA = 100°C 2
Emitter Cutoff Current IEBO 50 nA VEB = 4.0 V, IC = 0 2
DC Current Gain HFE 80 IC = 1.0 mA, VCE = 5.0 V 2
DC Current Gain HFE 80 250 IC = 10 mA, VCE = 5.0 V 2
DC Current Gain HFE 30 IC = 50 mA, VCE = 5.0 V 2
Collector-Emitter Saturation Voltage VCE(S) 0.2 V IC = 10 mA, IB = 1.0 mA 2
Collector-Emitter Saturation Voltage VCE(S) 0.15 V IC = 50 mA, IB = 5.0 mA 2
Base-Emitter Saturation Voltage VBE(S) 1 V IC = 10 mA, IB = 1.0 mA 2
Collector Emitter Cut-off Current ICES 50 nA VCB = 10 V 2
Collector Emitter Cut-off Current ICES 100 nA VCB = 75 V 2
Collector-Emitter Voltage VCEO 160 V 1
Collector-Base Voltage VCBO 180 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current - Continuous IC 600 mA 1
Junction and Storage Temperature TJ,Tstg -55 150 ℃ 1
Total Device Dissipation, FR-5 Board PD 225 mW FR-5 board (Note 1), TA = 25ºC 1
Derate above 25ºC, FR-5 Board 1.8 mW/℃ FR-5 board, above 25ºC 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RΘJA 556 ℃/W FR-5 board (Note 1) 1
Total Device Dissipation, Alumina Substrate PD 300 mW Alumina substrate (Note 2), TA = 25ºC 1
Derate above 25ºC, Alumina Substrate 2.4 mW/℃ Alumina substrate, above 25ºC 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RΘJA 417 ℃/W Alumina substrate (Note 2) 1

CAD (KiCad official)

  • Symbol: 2N5551
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2n5551-etched.step / 2n5551-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n5551.step / 2n5551.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: RUILON Shenzhen Ruilongyuan Elec datasheet (5 pp, sha256 b5cf0a9a4c572402, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF