component
2N5551-TA
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2N5551-TA
Changjing · Bipolar (BJT) · TO-92
2N5551-TA from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet lists it as pin 1 of the TO-92 package and gives an emitter-base breakdown voltage V(BR)EBO of 6 V (IE=10µA, IC=0). |
| 2 | BASE | passive | Base terminal of the NPN transistor; the datasheet lists it as pin 2 of the TO-92 package and gives a base-emitter saturation voltage VBE(sat) of 1 V maximum at IC=50mA, IB=5mA. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet lists it as pin 3 of the TO-92 package and gives a collector-emitter breakdown voltage V(BR)CEO of 160 V (IC=1mA, IB=0). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 180 | V | IC=100µA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 160 | V | IC=1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10µA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | 50 | nA | VCB=120V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 50 | nA | VEB=4V,IC=0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 80 | VCE=5V, IC=1mA | 1 | |||
| DC current gain hFE(2) | hFE(2) | 80 | 300 | VCE=5V, IC=10mA | 1 | ||
| DC current gain hFE(3) | hFE(3) | 50 | VCE=5V, IC=50mA | 1 | |||
| Collector-emitter saturation voltage VCE(sat)(1) | VCE(sat)(1) | 0.15 | V | IC=10mA,IB=1mA | 1 | ||
| Collector-emitter saturation voltage VCE(sat)(2) | VCE(sat)(2) | 0.2 | V | IC=50mA,IB=5mA | 1 | ||
| Base-emitter saturation voltage VBE(sat)(1) | VBE(sat)(1) | 1 | V | IC=10mA,IB=1mA | 1 | ||
| Base-emitter saturation voltage VBE(sat)(2) | VBE(sat)(2) | 1 | V | IC=50mA,IB=5mA | 1 | ||
| Collector output capacitance | Cob | 6 | pF | VCB=10V,IE=0, f=1MHz | 1 | ||
| Emitter input capacitance | Cib | 20 | pF | VBE=0.5V,IC=0, f=1MHz | 1 | ||
| Transition frequency | fT | 100 | 300 | MHz | VCE=10V,IC=10mA, f=100MHz | 1 | |
| Collector-base voltage | VCBO | 180 | V | 1 | |||
| Collector-emitter voltage | VCEO | 160 | V | 1 | |||
| Emitter-base voltage | VEBO | 6 | V | 1 | |||
| Collector current | IC | 0.6 | A | 1 | |||
| Collector power dissipation | PC | 625 | mW | 1 | |||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 200 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2N5551-TA - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
2n5551-ta-etched.step/2n5551-ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n5551-ta.step/2n5551-ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (2 pp, sha256
19e29acd5fcb597f, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).