component
2N5551 C
Public Made by Adomby adom
HL Haolin Elec Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdown2N5551 C
HL Haolin Elec · Bipolar (BJT) · TO-92-3
2N5551 C from HL Haolin Elec, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is 6 V at IE=100 μA with IC=0. |
| 2 | BASE | passive | Base terminal of the NPN transistor; the base-emitter saturation voltage VBEsat is 1 V at IC=50 mA and IB=5 mA. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the collector-base breakdown voltage V(BR)CBO is 180 V at IC=100 μA with IE=0, and the collector current ICM is rated at 0.6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL Haolin Elec |
| Package | TO-92-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 180 | V | Ic= 100 μA IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 160 | V | Ic= 100uA IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE= 100μA IC=0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | μA | VCB= 180V IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | μA | VEB= 4 V IC=0 | 1 | ||
| DC current gain | hFE 1 | 80 | VCE= 5 V, IC= 1 mA | 1 | |||
| DC current gain | hFE 2 | 80 | 250 | VCE= 5 V, IC = 10 mA | 1 | ||
| DC current gain | hFE 3 | 50 | VCE= 5 V, IC= 50 mA | 1 | |||
| Collector-emitter saturation voltage | VCEsat | 0.5 | V | IC= 50 mA, IB= 5 mA | 1 | ||
| Base-emitter saturation voltage | VBEsat | 1 | V | IC= 50 mA, IB= 5 mA | 1 | ||
| Transition frequency | fT | 80 | MHz | VCE= 5 V,IC= 10 mA,f =30MHz | 1 | ||
| hFE classification rank C range (suffix C interpretation) | hFE(2) | 150 | 250 | Rank C | 1 | ||
| Power dissipation | PCM | 0.625 | W | Tamb=25℃ | 1 | ||
| Collector current | ICM | 0.6 | A | 1 | |||
| Operating and storage junction temperature range | TJ Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
2N5551 C - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
2n5551-c-etched.step/2n5551-c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n5551-c.step/2n5551-c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL Haolin Elec datasheet (3 pp, sha256
509befc9fc48c71e, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).