component
2N5401U
Public Made by Adomby adom
CBI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2N5401U
CBI · Bipolar (BJT) · SOT-89
2N5401U from CBI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; VEBO max -5 V, IEBO max -50 nA at VEB=-3 V. |
| 2 | Collector | passive | Collector of the PNP transistor (also the SOT-89 tab); VCBO -160 V, VCEO -150 V, IC continuous -0.5 A. |
| 3 | Emitter | passive | Emitter of the PNP transistor; total power dissipation 0.5 W, junction temperature 150 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -160 | V | IC= -100μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -150 | V | IC = -1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE = -10μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -50 | nA | VCB = -120 V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -50 | nA | VEB= -3V, IC=0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 50 | VCE= -5V, IC=-1 mA | 1 | |||
| DC current gain hFE(2) | hFE(2) | 60 | 300 | VCE= -5V, IC= -10 mA | 1 | ||
| DC current gain hFE(3) | hFE(3) | 50 | VCE= -5V, IC=-50 mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.2 | V | IC= -10 mA, IB= -1 mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC= -50 mA, IB= -5 mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1 | V | IC= -10 mA, IB= -1 mA | 1 | ||
| Transition frequency | fT | 100 | 300 | MHz | VCE= -10V, IC= -10mA, f = 100MHz | 1 | |
| Output capacitance | Cob | 6 | pF | VCB=-10V, IE= 0,f=1MHz | 1 | ||
| Noise figure | NF | 8 | dB | VCE= -5.0V, IC= -200μA, RS= 10Ω,f =10Hz to15.7kHz | 1 | ||
| Collector-emitter voltage | VCEO | -150 | V | 1 | |||
| Collector-base voltage | VCBO | -160 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current, continuous | IC | -0.5 | A | 1 | |||
| Collector power dissipation | PC | 0.5 | W | 1 | |||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RθJA | 250 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2N5401U - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2n5401u-etched.step/2n5401u-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n5401u.step/2n5401u.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (3 pp, sha256
0128aa494cb2f02b, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).