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Contents

README

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2N4403

Foshan Blue Rocket Elec · Bipolar Transistors - BJT · TO-92

2N4403 from Foshan Blue Rocket Elec, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Collector passive Collector of the PNP transistor; VCEO -40 V, VCBO -40 V, continuous collector current up to -600 mA.
2 Base passive Base of the PNP transistor; VEBO limit of -5.0 V to the emitter.
3 Emitter passive Emitter of the PNP transistor; VEBO limit of -5.0 V with respect to the base.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package TO-92
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage VCBO -40 V Ta=25℃ 2
Collector to Emitter Voltage VCEO -40 V Ta=25℃ 2
Emitter to Base Voltage VEBO -5 V Ta=25℃ 2
Collector Current - Continuous IC -600 mA Ta=25℃ 2
Collector Power Dissipation PC 625 mW Ta=25℃ 2
Junction Temperature Tj 150 ℃ Ta=25℃ 2
Storage Temperature Range Tstg -55 150 ℃ 2
Thermal Resistance, Junction to Ambient RθJA 200 ℃/W 2
Collector to Base Breakdown Voltage VCBO -40 V IC=-0.1mA IE=0 2
Collector to Emitter Breakdown Voltage VCEO -40 V IC=-1.0mA IB=0 2
Emitter to Base Breakdown Voltage VEBO -5 V IE=-0.1mA IC=0 2
Collector Cut-Off Current ICBO -50 nA VCB=-40V IE=0 2
Emitter Cut-Off Current IEBO -50 nA VEB=-5V IC=0 2
DC Current Gain (1) hFE(1) 100 300 VCE=-2.0V IC=-150mA 2
DC Current Gain (2) hFE(2) 30 VCE=-1.0V IC=-0.1mA 2
DC Current Gain (3) hFE(3) 60 VCE=-1.0V IC=-1.0mA 2
DC Current Gain (4) hFE(4) 100 VCE=-1.0V IC=-10mA 2
DC Current Gain (5) hFE(5) 20 VCE=-2.0V IC=-500mA 2
Collector to Emitter Saturation Voltage (1) VCE(sat)(1) -0.4 V IC=-150mA IB=-15mA 2
Collector to Emitter Saturation Voltage (2) VCE(sat)(2) -0.75 V IC=-500mA IB=-50mA 2
Base to Emitter Saturation Voltage (1) VBE(sat)(1) -0.95 -0.75 V IC=-150mA IB=-15mA 2
Base to Emitter Saturation Voltage (2) VBE(sat)(2) -1.3 V IC=-500mA IB=-50mA 2
Current Gain Bandwidth Product fT 200 MHz VCE=-10V IC=-20mA 2
Delay Time td 15 ns VCC=-30V IC=-150mA IB1=-15mA 2
Rise Time tr 20 ns VCC=-30V IC=-150mA IB1=-15mA 2
Storage Time ts 225 ns VCC=-30V IC=-150mA IB1=IB2=-15mA 2
Fall Time tf 30 ns VCC=-30V IC=-150mA IB1=IB2=-15mA 2

CAD (KiCad official)

  • Symbol: 2N4403
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 2n4403-etched.step / 2n4403-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n4403.step / 2n4403.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256 e1bcea8fa29dd261, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF