component
2N3906U
Public Made by Adomby adom
CBI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2N3906U
CBI · Bipolar (BJT) · SOT-89
2N3906U from CBI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO max -6 V and VCBO/VCEO max -40 V apply to this terminal's junctions. |
| 2 | C | passive | Collector of the PNP transistor; continuous collector current is rated -0.2 A and VCEO -40 V. |
| 3 | E | passive | Emitter of the PNP transistor; emitter-base voltage is rated -6 V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -40 | V | 1 | |||
| Collector-emitter voltage | VCEO | -40 | V | 1 | |||
| Emitter-base voltage | VEBO | -6 | V | 1 | |||
| Collector current, continuous | IC | -0.2 | A | 1 | |||
| Collector power dissipation | PC | 0.5 | W | 1 | |||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 250 | ℃/W | 1 | |||
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-10μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -40 | V | IC=-1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -6 | V | IE=-10μA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.05 | μA | VCB=-30V,IE=0 | 1 | ||
| Emitter cut-off current | EBO | -0.05 | μA | VEB=-6V,IC=0 | 1 | ||
| DC current gain | hFE(1) | 60 | VCE=-1V,IC=-0.1mA | 1 | |||
| DC current gain | hFE(2) | 80 | VCE=-1V,IC=-1mA | 1 | |||
| DC current gain | hFE(3) | 100 | 300 | VCE=-1V,IC=-10mA | 1 | ||
| DC current gain | hFE(5) | 30 | VCE=-1V,IC=-100mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | -0.25 | V | IC=-10mA,IB=-1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)2 | -0.4 | V | IC=-50mA,IB=-5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat)1 | -0.65 | -0.85 | V | IC=-10mA,IB=-1mA | 1 | |
| Base-emitter saturation voltage | VBE(sat)2 | -0.95 | V | IC=-50mA,IB=-5mA | 1 | ||
| Transition frequency | fT | 250 | MHz | VCE=-20V,IC=-10mA,f=100MHz | 1 | ||
| Collector capacitance | Cc | 4.5 | pF | VCB=-5V,IE=0,f=1MHz | 1 | ||
| Emitter capacitance | Ce | 10 | pF | VEB=-0.5V,IC=0,f=1MHz | 1 | ||
| Noise figure | NF | 4 | dB | VCE=-5V,Ic=-0.1mA,f=10Hz-15.7kHz, RS=1KΩ | 1 | ||
| Delay time | td | 35 | nS | 1 | |||
| Rise time | tr | 35 | nS | 1 | |||
| Storage time | tS | 225 | nS | 1 | |||
| Fall time | tf | 75 | nS | IC=-10mA , IB1=-IB2= -1mA | 1 | ||
| Collector cut-off current (ICEX) | ICEX | -0.05 | μA | VCB=-30V,VBE(off)=-3V | 1 |
CAD (KiCad official)
- Symbol:
2N3906U - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2n3906u-etched.step/2n3906u-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n3906u.step/2n3906u.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (3 pp, sha256
e8432ffcfda859a9, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).