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2N3904X

Public Made by Adom

by adom

Shenzhen JingYang Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N3904X

Shenzhen JingYang · Bipolar (BJT) · TO-92

2N3904X from Shenzhen JingYang, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter of the NPN transistor, with an absolute maximum emitter-base voltage VEBO of 6 V.
2 Base passive Base of the NPN transistor, with an emitter-base cutoff current IEBO of at most 50 nA at VEB = 6 V.
3 Collector passive Collector of the NPN transistor, with absolute maximum ratings of VCBO 60 V, VCEO 40 V, IC 200 mA and Ptot 625 mW.

Key specifications

Parameter Value
Manufacturer Shenzhen JingYang
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain at VCE = 1 V, IC = 0.1 mA hFE 40 VCE = 1 V, IC = 0.1 mA 2
DC Current Gain at VCE = 1 V, IC = 1 mA hFE 70 VCE = 1 V, IC = 1 mA 2
DC Current Gain at VCE = 1 V, IC = 10 mA hFE 100 300 VCE = 1 V, IC = 10 mA 2
DC Current Gain at VCE = 1 V, IC = 50 mA hFE 60 VCE = 1 V, IC = 50 mA 2
DC Current Gain at VCE = 1 V, IC = 100 mA hFE 30 VCE = 1 V, IC = 100 mA 2
Gain Bandwidth Product fT 300 MHz VCE = 20 V, IC = 10 mA, f = 100 MHz 2
Collector Base Cutoff Current ICBO 50 nA VCB = 30 V 2
Emitter Base Cutoff Current IEBO 50 nA VEB = 6 V 2
Collector Base Breakdown Voltage V(BR)CBO 60 V IC = 10 µA 2
Collector Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1 mA 2
Emitter Base Breakdown Voltage V(BR)EBO 6 V IE = 10 µA 2
Collector Emitter Saturation Voltage VCE(sat) 0.2 V IC = 10 mA, IB = 1 mA 2
Collector Emitter Saturation Voltage VCE(sat) 0.3 V IC = 50 mA, IB = 5 mA 2
Base Emitter Saturation Voltage VBE(sat) 0.85 V IC = 10 mA, IB = 1 mA 2
Base Emitter Saturation Voltage VBE(sat) 0.95 V IC = 50 mA, IB = 5 mA 2
Collector Base Capacitance Cob 4 pF VCB = 5 V, f = 100 KHz 2
Delay Time td 35 ns VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA 2
Rise Time tr 35 ns VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA 2
Storage Time ts 200 ns VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA 2
Fall Time tf 50 ns VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA 2
Collector Base Voltage VCBO 60 V Ta = 25 °C 1
Collector Emitter Voltage VCEO 40 V Ta = 25 °C 1
Emitter Base Voltage VEBO 6 V Ta = 25 °C 1
Collector Current IC 200 mA Ta = 25 °C 1
Power Dissipation Ptot 625 mW Ta = 25 °C 1
Junction Temperature Tj 150 °C Ta = 25 °C 1
Storage Temperature Range Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: 2N3904X
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 2n3904x-etched.step / 2n3904x-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n3904x.step / 2n3904x.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen JingYang datasheet (4 pp, sha256 d8ec5402ab23b74b, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF