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2N3904TFR

Public Made by Adom

by adom

onsemi Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N3904TFR

onsemi · Bipolar (BJT) · TO-92-3

2N3904TFR from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter terminal of the NPN transistor; the datasheet gives no pin-specific limit, so the device maximum of VEBO 6.0 V applies.
2 B passive Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, and the device ratings (IC 200 mA continuous, TJ up to 150 °C) apply.
3 C passive Collector terminal of the NPN transistor; the datasheet gives no pin-specific limit, so VCEO 40 V and VCBO 60 V with IC 200 mA continuous apply.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 40 V 3
Collector-Base Voltage VCBO 60 V 3
Emitter-Base Voltage VEBO 6 V 3
Collector Current - Continuous IC 200 mA 3
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C 3
Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1.0 mA, IB = 0 4
Collector-Base Breakdown Voltage V(BR)CBO 60 V IC = 10 μA, IE = 0 4
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE = 10 μA, IC = 0 4
Base Cut-Off Current IBL 50 nA VCE = 30 V, VEB = 3 V 4
Collector Cut-Off Current ICEX 50 nA VCE = 30 V, VEB = 3 V 4
DC Current Gain hFE 40 IC = 0.1 mA, VCE = 1.0 V 4
DC Current Gain hFE 70 IC = 1.0 mA, VCE = 1.0 V 4
DC Current Gain hFE 100 300 IC = 10 mA, VCE = 1.0 V 4
DC Current Gain hFE 60 IC = 50 mA, VCE = 1.0 V 4
DC Current Gain hFE 30 IC = 100 mA, VCE = 1.0 V 4
Collector-Emitter Saturation Voltage VCE(sat) 0.2 V IC = 10 mA, IB = 1.0 mA 4
Collector-Emitter Saturation Voltage VCE(sat) 0.3 V IC = 50 mA, IB = 5.0 mA 4
Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85 V IC = 10 mA, IB = 1.0 mA 4
Base-Emitter Saturation Voltage VBE(sat) 0.95 V IC = 50 mA, IB = 5.0 mA 4
Current Gain - Bandwidth Product fT 300 MHz IC = 10 mA, VCE = 20 V, f = 100 MHz 4
Output Capacitance Cobo 4 pF VCB = 5.0 V, IE = 0, f = 100 kHz 4
Input Capacitance Cibo 8 pF VEB = 0.5 V, IC = 0, f = 100 kHz 4
Noise Figure NF 5 dB IC = 100 μA, VCE = 5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz 4
Delay Time td 35 ns VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA 4
Rise Time tr 35 ns VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA 4
Storage Time ts 200 ns VCC = 3.0 V, IC = 10 mA, IB1 = IB2 = 1.0 mA 4
Fall Time tf 50 ns 4
Total Device Dissipation PD 625 mW 2N3904 column (TO-92) 3
Thermal Resistance, Junction to Case RθJC 83.3 °C/W 3
Thermal Resistance, Junction to Ambient RθJA 200 °C/W 2N3904 column (TO-92) 3
Derate Above 25°C PD derating 5 mW/°C 2N3904 column (TO-92), derate above 25°C 3

CAD (KiCad official)

  • Symbol: 2N3904TFR
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: 2n3904tfr-etched.step / 2n3904tfr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n3904tfr.step / 2n3904tfr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 049468eef22760f3, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF