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2N3904-TA

Changjing · Bipolar (BJT) · TO-92-2.54mm

2N3904-TA from Changjing, in a TO-92-2.54mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the NPN transistor; the datasheet gives an emitter-base breakdown voltage V(BR)EBO of 6 V (IE=10µA, IC=0) and a maximum emitter-base voltage VEBO of 6 V.
2 B passive Base of the NPN transistor; the datasheet gives a base-emitter saturation voltage VBE(sat) of 0.95 V maximum at IC=50mA, IB=5mA.
3 C passive Collector of the NPN transistor; the maximum ratings are VCBO 60 V, VCEO 40 V, continuous collector current IC 0.2 A and collector power dissipation PC 0.625 W.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-92-2.54mm
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 60 V Ta=25℃ (maximum ratings table header) 1
Collector-emitter voltage VCEO 40 V Ta=25℃ (maximum ratings table header) 1
Emitter-base voltage VEBO 6 V Ta=25℃ (maximum ratings table header) 1
Collector current -Continuous IC 0.2 A Ta=25℃ (maximum ratings table header) 1
Collector power dissipation PC 0.625 W Ta=25℃ (maximum ratings table header) 1
Junction temperature TJ 150 ℃ Ta=25℃ (maximum ratings table header) 1
Storage temperature Tstg -55 150 ℃ Ta=25℃ (maximum ratings table header) 1
Collector-base breakdown voltage V(BR)CBO 60 V Ta=25℃; IC=10μA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 40 V Ta=25℃; IC= 1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V Ta=25℃; IE= 10μA, IC=0 1
Collector cut-off current ICBO 0.1 μA Ta=25℃; VCB=60V, IE=0 1
Emitter cut-off current IEBO 0.1 μA Ta=25℃; VEB= 5V, IC=0 1
DC current gain hFE1 100 400 Ta=25℃; VCE=1V, IC=10mA 1
DC current gain hFE2 60 Ta=25℃; VCE=1V, IC=50mA 1
DC current gain hFE3 30 Ta=25℃; VCE=1V, IC=100mA 1
Collector-emitter saturation voltage VCE(sat) 0.3 V Ta=25℃; IC=50mA, IB=5mA 1
Base-emitter saturation voltage VBE(sat) 0.95 V Ta=25℃; IC=50mA, IB=5mA 1
Transition frequency fT 300 MHZ Ta=25℃; VCE=20V, IC=10mA, f=100MHz 1
Delay time td 35 ns 1
Rise time tr 35 ns VCC=3V, VBE=0.5V, IC=10mA, IB1=1mA 1
Storage time ts 200 ns 1
Fall time tf 50 ns VCC=3V, IC=10mA, IB1=IB2=1mA 1

CAD (KiCad official)

  • Symbol: 2N3904-TA
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-2.54mm (KiCad packages3D, STEP)
  • 3D model files: 2n3904-ta-etched.step / 2n3904-ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n3904-ta.step / 2n3904-ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (2 pp, sha256 bacae657187d6e0f, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF