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2N2222A-338

Public Made by Adom

by adom

ALJ Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N2222A-338

ALJ · Bipolar (BJT) · TO-92

2N2222A-338 from ALJ, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive NPN emitter terminal, operated within the absolute maximum ratings of VEBO 6 V, IC 600 mA and Tj 150 °C stated for the device.
2 Base passive NPN base terminal, driven in the datasheet's saturation tests at IB = 15 mA for IC = 150 mA and IB = 50 mA for IC = 500 mA.
3 Collector passive NPN collector terminal, limited to VCBO 75 V, VCEO 40 V and IC 600 mA, with collector power dissipation PC of 625 mW maximum.

Key specifications

Parameter Value
Manufacturer ALJ
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Base Voltage VCBO 75 V 1
Collector Emitter Voltage VCEO 40 V 1
Emitter Base Voltage VEBO 6 V 1
Collector Current IC 600 mA 1
Collector Power Dissipation PC 625 mW 1
Junction Temperature Tj 150 °C 1
Storage Temperature Tstg -55 150 °C 1
Collector-base breakdown voltage V(BR)CBO 75 V IC = 10µA, IE = 0 2
Collector-emitter breakdown voltage V(BR)CEO 40 V IC = 10mA, IB = 0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE = 10µA, IC = 0 2
Collector cut-off current ICBO 10 nA VCB = 60V, IE = 0 2
Emitter cut-off current IEBO 100 nA VEB = 3V, IC = 0 2
DC current gain hFE(1) 100 VCE = 5V, IC = 1mA 2
DC current gain hFE(2) 100 300 VCE = 10V, IC = 150mA 2
DC current gain hFE(3) 40 VCE = 10V, IC = 0.1mA 2
DC current gain hFE(4) 42 VCE = 10V, IC = 500mA 2
Collector-emitter saturation voltage VCE(sat) 0.3 V IC = 150mA, IB = 15mA 2
Collector-emitter saturation voltage VCE(sat) 0.6 V IC = 500mA, IB = 50mA 2
Base-emitter saturation voltage VBE(sat) 1.2 V IC = 500mA, IB = 50mA 2
Transition frequency fT 300 MHz VCE = 20V, IC = 20mA, f = 100MHz 2
Delay time td 10 ns VCC = 30V, VEB(Off) = -0.5V, IC =1 50mA, IB1 = 15mA 2
Rise time tr 25 ns VCC = 30V, VEB(Off) = -0.5V, IC =1 50mA, IB1 = 15mA 2
Storage time ts 225 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 2
Fall time tf 60 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 2

CAD (KiCad official)

  • Symbol: 2N2222A-338
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 2n2222a-338-etched.step / 2n2222a-338-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n2222a-338.step / 2n2222a-338.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ALJ datasheet (3 pp, sha256 76d3e39486350c58, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF