component
2EDS8265H
Public Made by Adomby adom
Infineon Technologies Gate Drivers, SOIC-16-300mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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2EDS8265H
Infineon Technologies · Gate Drivers · SOIC-16-300mil
2EDS8265H from Infineon Technologies, in a SOIC-16-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | INA | input | Digital CMOS/TTL logic input for channel A with internal pull-down resistor to GNDI; connect to GNDI if channel is not used. |
| 2 | INB | input | Digital CMOS/TTL logic input for channel B with internal pull-down resistor to GNDI; connect to GNDI if channel is not used. |
| 3 | VDDI | power_in | Input-side supply voltage 3.3 V (internal SLDO available); a bypass capacitor to GNDI is recommended. |
| 4 | GNDI | power_in | Input-side ground to which all input-side signals are referenced. |
| 5 | DISABLE | input | Digital CMOS/TTL logic input for both channels A and B; logic high disables both output channels, with internal pull-down resistor. |
| 6 | N.C. | unconnected | Not connected; keep pin floating. |
| 7 | N.C. | unconnected | Not connected; keep pin floating. |
| 8 | SLDON | input | Default 3.3 V supply selected if N.C. or connected to VDDI; connected to GNDI activates SLDO allowing a supply higher than 3.5 V; internal pull-up to VDDI, hard-wired PCB connection recommended. |
| 9 | GNDB | power_in | Ground for output channel B. |
| 10 | OUTB | output | Output gate driver for channel B. |
| 11 | VDDB | power_in | Supply voltage for output channel B; a bypass capacitor to GNDB is recommended. |
| 12 | N.C. | unconnected | Not present; not connected; for channel-to-channel isolation. |
| 13 | N.C. | unconnected | Not connected; for channel-to-channel isolation. |
| 14 | GNDA | power_in | Ground for output channel A. |
| 15 | OUTA | output | Output gate driver for channel A. |
| 16 | VDDA | power_in | Supply voltage for output channel A; a bypass capacitor to GNDA is recommended. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOIC-16-300mil |
| Category | Motor Driver ICs |
| Pins | 16 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input supply voltage | VDDI | -0.3 | 4 | V | SLDO inactive (N.C. or connected to VDDI) | 14 | |
| Output supply voltage | VDDO | -0.3 | 22 | V | 14 | ||
| Voltage at pins PWM and DISABLE | VIN | -0.3 | 17 | V | 14 | ||
| Voltage at pins PWM and DISABLE (transient) | VIN | -5 | V | < 50 ns for transient | 14 | ||
| Voltage at pins DTC and TEST/SLDO | VDTC / VTEST/SLDO | -0.3 | V | 14 | |||
| Voltage at pins OUTA, OUTB | VOUTA/B | -0.3 | V | 14 | |||
| Voltage at pins OUTA, OUTB (transient) | VOUTA/B | -2 | V | < 200 ns | 14 | ||
| Reverse current peak at pins OUTA, OUTB (source) | ISRC_rev | -5 | Apk | < 500 ns | 14 | ||
| Reverse current peak at pins OUTA, OUTB (sink) | ISNK_rev | 5 | Apk | 14 | |||
| Non-destructive Common Mode Transient Immunity | CMTI | 400 | V/ns | input to each output channel | 14 | ||
| Junction temperature | TJ | -40 | 150 | °C | 14 | ||
| Storage temperature | TSTG | -65 | 150 | °C | 14 | ||
| Soldering temperature | TSOL | 260 | °C | reflow / wave soldering | 14 | ||
| ESD capability CDM | VESD_CDM | 0.5 | kV | Charged Device Model (CDM) | 14 | ||
| ESD capability HBM | VESD_HBM | 2 | kV | Human Body Model (HBM) | 14 | ||
| Input supply voltage | VDDI | 3 | 3.5 | V | Min. defined by UVLO | 16 | |
| Output supply voltage | VDDA / VDDB | 4.5 | 20 | V | Min. defined by UVLO | 16 | |
| Logic input voltage at pins INA, INB, DISABLE | VIN | 0 | 15 | V | 16 | ||
| Voltage at pins DTC and SLDO | VDTC / VTEST/SLDO | 0 | 3.5 | V | 16 | ||
| Junction temperature (operating) | TJ | -40 | 150 | °C | continuous operation above 125°C may reduce lifetime | 16 | |
| Ambient temperature | Tamb | -40 | 125 | °C | 16 | ||
| Undervoltage Lockout (UVLO) turn-on threshold VDDI | UVLOon | 2.75 | 2.85 | 2.95 | V | 16 | |
| UVLO threshold hysteresis VDDI | UVLOhys | 0.1 | 0.15 | 0.2 | V | 16 | |
| Undervoltage Lockout (UVLO) turn-on threshold VDDA, VDDB (8 V version) | UVLO_CMon | 7.6 | 8 | 8.4 | V | 17 | |
| UVLO threshold hysteresis VDDA, VDDB (8 V version) | UVLO_CMhys | 0.7 | 1 | 1.3 | V | 17 | |
| Input voltage threshold for transition LH | VINH | 1.7 | 2 | 2.3 | V | 17 | |
| Input voltage threshold hysteresis | VIN_hys | 0.4 | 0.8 | 1.2 | V | 17 | |
| High-level (Sourcing) Output Resistance (4 A/8 A) | Ron_SRC | 0.42 | 0.85 | 1.6 | Ω | ISNK = 50 mA | 18 |
| Peak Sourcing Output Current (4 A/8 A) | ISRC_pk | -4 | A | 18 | |||
| Low-level (Sinking) Output Resistance (4 A/8 A) | Ron_SNK | 0.18 | 0.35 | 0.75 | Ω | ISRC = 50 mA | 18 |
| Peak Sinking Output Current (4 A/8 A) | ISNK_pk | -8 | A | 18 | |||
| INA-/INB-to-output turn-on / turn-off propagation delay | tPDon, tPDoff | 31 | 37 | 44 | ns | 4 A/8 A version | 18 |
| DISABLE-to-output turn-on/-off propagation delay | tPDDISoff | 100 | ns | 18 | |||
| Output turn-on propagation delay mismatch between channels | ∆tPDon | 3 | ns | INA, INB shorted | 18 | ||
| Fall time | tfall | 4.5 | 8 | ns | 19 | ||
| Maximum transient isolation voltage | VIOTM | 8000 | Vpk | qualification for t = 60 s; production test with VIOTM > 10 kVpk for t = 1 s | 23 | ||
| Maximum repetitive peak isolation voltage | VIORM | 1420 | Vpk | Time Dependent Dielectric Breakdown test method | 23 | ||
| Maximum isolation working voltage (DC) | VIOWM | 1420 | VDC | 23 | |||
| Maximum isolation working voltage (RMS) | VIOWM | 1000 | VRMS | 23 | |||
| Partial discharge voltage | VPD | 4500 | Vpk | 10.2 kVpk for t = 1 s followed by partial discharge 4.5 kVpk > 1.875 x VIOWM, QPD < 5 pC; production test | 23 | ||
| Maximum surge isolation voltage | VIOSM | 6250 | Vpk | VIOSM_test = 1.6 x VIOSM >10 kVpk; sample tested | 23 | ||
| Common Mode Transient Immunity (isolation) | CMTI | 150 | V/ns | input to each output channel; static & dynamic; sample test | 23 | ||
| Withstand isolation voltage | VISO | 5700 | VRMS | VISO = 5700 VRMS for t = 60 s (qualification); VISO > 1.2 x VRMS = 6840 V for t = 1 s | 24 | ||
| Functional isolation channel-to-channel test voltage | VCh2Ch-DC-test | 1500 | VDC | Impulse Test >10 ms; sample tested | 24 | ||
| Package creepage (channel-to-channel) | CPG | 2.4 | 2.5 | 2.7 | mm | Shortest distance over surface, from Output pin Ch1-GND to output pin Ch2-VDD | 24 |
| Safety supply power, input chip | 20 | mW | RthJA = 59 K/W, Tamb = 25°C, TJ = 150°C | 24 | |||
| Safety supply power, Output A | 1050 | mW | 24 | ||||
| Safety supply power, Output B | 1050 | mW | 24 | ||||
| Safety supply power, total | 2120 | mW | 24 | ||||
| Safety supply current, Output A | 87.5 | mA | RthJA = 59 K/W, VDDA/VDDB = 12 V, Tamb = 25°C, TJ = 150°C | 24 | |||
| Safety supply current, Output B | 87.5 | mA | RthJA = 59 K/W, VDDA/VDDB = 12 V, Tamb = 25°C, TJ = 150°C | 24 | |||
| Safety supply current, Output A | 53.5 | mA | RthJA = 59 K/W, VDDA/VDDB = 20 V, Tamb = 25°C, TJ = 150°C | 24 | |||
| Safety supply current, Output B | 53.5 | mA | RthJA = 59 K/W, VDDA/VDDB = 20 V, Tamb = 25°C, TJ = 150°C | 24 | |||
| Safety temperature | Ts | 150 | °C | Ts = TJ,max | 24 | ||
| Thermal resistance junction-ambient (PG-DSO-16-30, WB) | RthJA | 59 | K/W | 15 | |||
| Thermal resistance junction-case (top) (PG-DSO-16-30, WB) | RthJC | 32 | K/W | 15 | |||
| Thermal resistance junction-board (PG-DSO-16-30, WB) | RthJB | 33 | K/W | 15 | |||
| Characterization parameter junction-top (PG-DSO-16-30, WB) | ΨthJT | 8.9 | K/W | 15 | |||
| Characterization parameter junction-board (PG-DSO-16-30, WB) | ΨthJB | 7.7 | K/W | 15 |
CAD (KiCad official)
- Symbol:
2EDS8265H - Footprint:
Package_SO:SOIC-16_3.9x9.9mm_P1.27mm - 3D model: SOIC-16-300mil (KiCad packages3D, STEP)
- 3D model files:
2eds8265h-etched.step/2eds8265h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2eds8265h.step/2eds8265h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (38 pp, sha256
6da31bc3361e73a6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).