component
28N50
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-3P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
28N50
HXY MOSFET · MOSFETs · TO-3P
28N50 from HXY MOSFET, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the device is rated for VDS of 500 V and ID of 28 A at TC=25℃. |
| 3 | S | passive | Source terminal; the datasheet gives the drain-source voltage and current ratings measured between drain and source. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-3P |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 500 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current | ID | 28 | A | @TC=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 112 | A | 1 | |||
| Total Power Dissipation | PD | 312.5 | W | @TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=500V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS,ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 150 | 180 | mΩ | VGS=10V, ID=14A | 2 | |
| Diode Forward Voltage | VSD | 1.4 | V | VGS=0V,IS=14A | 2 | ||
| Diode Forward Current | IS | 28 | A | 2 |
CAD (KiCad official)
- Symbol:
28N50 - Footprint:
Package_TO_SOT_THT:TO-3P-3_Vertical - 3D model: TO-3P (KiCad packages3D, STEP)
- 3D model files:
28n50-etched.step/28n50-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);28n50.step/28n50.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
9651a93858033748, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 28N50
**HXY MOSFET** · MOSFETs · TO-3P
28N50 from HXY MOSFET, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the device is rated for VDS of 500 V and ID of 28 A at TC=25℃. |
| 3 | S | passive | Source terminal; the datasheet gives the drain-source voltage and current ratings measured between drain and source. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-3P |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 500 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Drain Current | ID | | | 28 | A | @TC=25℃ | 1 |
| Pulsed Drain Current | IDM | | | 112 | A | | 1 |
| Total Power Dissipation | PD | | | 312.5 | W | @TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 500 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=500V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 150 | 180 | mΩ | VGS=10V, ID=14A | 2 |
| Diode Forward Voltage | VSD | | | 1.4 | V | VGS=0V,IS=14A | 2 |
| Diode Forward Current | IS | | | 28 | A | | 2 |
## CAD (KiCad official)
- Symbol: `28N50`
- Footprint: `Package_TO_SOT_THT:TO-3P-3_Vertical`
- 3D model: TO-3P (KiCad packages3D, STEP)
- 3D model files: `28n50-etched.step` / `28n50-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `28n50.step` / `28n50.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/28n50-datasheet.pdf) (7 pp, sha256 `9651a93858033748`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/28n50-datasheet.pdf)