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25P10

Public Made by Adom

by adom

HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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25P10

HL · MOSFETs · TO-252

25P10 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, left lead in the TO252 pin-configuration picture; VGS absolute maximum ±20 V.
2 D passive Drain, centre lead (trimmed) and also the exposed mounting tab; VDS absolute maximum -100 V, continuous ID -25 A at TC=25°C.
3 S passive Source, right lead in the TO252 pin-configuration picture; continuous body-diode source current 25 A.

Key specifications

Parameter Value
Manufacturer HL
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -100 V V_GS = 0V, I_D = -250µA 2
Gate-body Leakage Current IGSS -100 100 nA V_DS = 0V, V_GS = ±20V 2
Zero Gate Voltage Drain Current IDSS -1 µA T_J = 25°C, V_DS = -100V, V_GS = 0V 2
Zero Gate Voltage Drain Current IDSS -20 µA T = 100°C 2
Drain-Source On-Resistance RDS(on) 59 70 mΩ V_GS = -10V, I_D = -10A 2
Drain-Source On-Resistance RDS(on) 120 150 mΩ V_GS = -4.5V, I_D = -6A 2
Diode Forward Voltage VSD -0.9 -1.3 V I_S = -10A, V_GS = 0V 2
Continuous Source Current IS 25 A 2
Drain-Source Voltage VDSS -100 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID -25 A T = 25 1
Continuous Drain Current ID -11 A T = 100 1
Pulsed Drain Current IDM -72 A 1
Single Pulsed Avalanche Energy EAS 42 mJ 1
Power Dissipation PD 102 W T = 25 1
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 1.22 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 91 °C/W 1
Forward Transconductance gfs 28 S V_DS = -10V, I_D = -10A 2
Input Capacitance Ciss 2859 pF V_DS = -50V, V_GS = 0V, f = 1MHz 2
Output Capacitance Coss 93 pF 2
Reverse Transfer Capacitance Crss 68 pF 2
Gate Resistance Rg 4.3 Ω f = 1MHz 2
Total Gate Charge Qg 53 nC V_GS = -10V, V_DS = -50V, I_D = -10A 2
Gate-Source Charge Qgs 12 nC 2
Gate-Drain Charge Qgd 10 nC 2
Turn-On Delay Time td(on) 8 ns V_GS = -10V, V_DS = -50V, R_G = 3Ω, I_D = -10A 2
Rise Time tr 27 ns 2
Turn-Off Delay Time td(off) 155 ns 2
Fall Time tf 77 ns 2
Body Diode Reverse Recovery Time trr 36 ns I_F = -10A, dI/dt = 100A/µs 2
Body Diode Reverse Recovery Charge Qrr 40 nC 2

CAD (KiCad official)

  • Symbol: 25P10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 25p10-etched.step / 25p10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 25p10.step / 25p10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (7 pp, sha256 d315ce9eba057548, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF