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25N10L-TN3-R-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown25N10L-TN3-R-VB
VBsemi Elec · MOSFETs · TO-252
25N10L-TN3-R-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with rDS(on) specified at VGS = 10 V and 4.5 V. |
| 2 | D | passive | Drain (also the case/tab, Junction-to-Case (Drain) RthJC 1.4 °C/W); drain-source voltage is 100 V with continuous current of 40 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous source-diode current is 40 A and pulsed source current is 120 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VSS = 0 V, ID = 250 µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 100 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 100 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 75 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.03 | Ω | VGS = 10 V, ID = 5 A | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.035 | Ω | VGS = 4.5 V, ID = 3 A | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.067 | Ω | VGS = 10 V, ID = 3 A, TJ = 175 °C | 2 | ||
| Forward Transconductance | gfs | 10 | S | VDS = 15 V, ID = 15 A | 2 | ||
| Total Gate Charge | Qg | 35 | 60 | nC | VDS = 50 V, VGS = 10 V, ID = 40 A | 2 | |
| Turn-On Delay Time | td(on) | 11 | 20 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 | |
| Rise Time | tr | 12 | 20 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 30 | 45 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 | |
| Fall Time | tf | 12 | 20 | ns | VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω | 2 | |
| Diode Continuous Current | IS | 40 | A | TC = 25 °C | 2 | ||
| Diode Pulsed Current | ISM | 120 | A | TC = 25 °C | 2 | ||
| Diode Forward Voltage | VSD | 1 | 1.5 | V | IF = 30 A, VGS = 0 V | 2 | |
| Reverse Recovery Charge | Qrr | 0.15 | 0.4 | µC | IF = 30 A, di/dt = 100 A/µs | 2 | |
| Drain-Source Voltage | VDS | 100 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 40 | A | TJ = 175 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 23 | A | TJ = 175 °C, TC = 125 °C | 1 | ||
| Pulsed Drain Current | IDM | 120 | A | TC = 25 °C | 1 | ||
| Avalanche Current | IAR | 35 | A | TC = 25 °C | 1 | ||
| Repetitive Avalanche Energy | EAR | 61 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 107 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.75 | W | TA = 25 °C, 1" square PCB | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 40 | °C/W | PCB mount | 1 | ||
| Junction-to-Case Thermal Resistance | RthJC | 1.4 | °C/W | Drain | 1 | ||
| Input Capacitance | Ciss | 2600 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 290 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 120 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 11 | nC | VDS = 50 V, VGS = 10 V, ID = 40 A | 2 | ||
| Gate-Drain Charge | Qgd | 9 | nC | VDS = 50 V, VGS = 10 V, ID = 40 A | 2 | ||
| Gate Resistance | RG | 1.7 | Ω | 2 | |||
| Reverse Recovery Time | trr | 60 | ns | IF = 30 A, di/dt = 100 A/µs | 2 | ||
| Peak Reverse Recovery Current | IRM(REC) | 5 | 8 | A | IF = 30 A, di/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
25N10L-TN3-R-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
25n10l-tn3-r-vb-etched.step/25n10l-tn3-r-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);25n10l-tn3-r-vb.step/25n10l-tn3-r-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
db0ba829222dd9f2, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).