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25N10GH-HF-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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25N10GH-HF-VB

VBsemi Elec · MOSFETs · TO-252

25N10GH-HF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of ±20 V (VGS).
2 D passive Drain of the N-channel MOSFET, rated for a drain-source voltage VDS of 100 V and a continuous drain current of 40 A at TC = 25 °C.
3 S passive Source of the N-channel MOSFET, the reference terminal for the gate-source voltage and the source-drain diode (IS 40 A continuous).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 40 A TC = 25 °C (TJ = 175 °C) 1
Continuous Drain Current ID 23 A TC = 125 °C 1
Pulsed Drain Current IDM 120 A 1
Avalanche Current IAR 35 A 1
Repetitive Avalanche Energy EAR 61 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 107 W TC = 25 °C 1
Maximum Power Dissipation PD 3.75 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient (PCB Mount) RthJA 40 °C/W PCB Mount 1
Junction-to-Case (Drain) RthJC 1.4 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VSS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 75 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance rDS(on) 0.03 0.035 Ω VGS = 10 V, ID = 5 A 2
Drain-Source On-State Resistance rDS(on) 0.053 Ω VGS = 4.5 V, ID = 3 A 2
Drain-Source On-State Resistance rDS(on) 0.067 Ω VGS = 10 V, ID = 3 A, TJ = 175 °C 2
Total Gate Charge Qg 35 60 nC VDS = 50 V, VGS = 10 V, ID = 40 A 2
Turn-On Delay Time td(on) 11 20 ns VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 2
Rise Time tr 12 20 ns VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 2
Fall Time tf 12 20 ns VDD = 50 V, RL = 1.25 Ω, ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 2
Continuous Current (source-drain diode) IS 40 A TC = 25 °C 2
Pulsed Current (source-drain diode) ISM 120 A 2
Forward Voltage VSD 1 1.5 V IF = 30 A, VGS = 0 V 2
Reverse Recovery Charge Qrr 0.15 0.4 µC 2

CAD (KiCad official)

  • Symbol: 25N10GH-HF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 25n10gh-hf-vb-etched.step / 25n10gh-hf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 25n10gh-hf-vb.step / 25n10gh-hf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 8f4b90d600ffeae4, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF