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23N06-31-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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23N06-31-VB

VBsemi Elec · MOSFETs · TO-252

23N06-31-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is limited to ±20 V per the absolute maximum ratings.
2 D passive Drain, electrically connected to the TO-252 tab; drain-source breakdown voltage V(BR)DSS is specified at 60 V minimum.
3 S passive Source of the N-channel MOSFET; continuous source (diode conduction) current IS is rated at 23 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM 100 A 1
Continuous Source Current (Diode Conduction) IS 23 A 1
Avalanche Current IAS 20 A 1
Single Avalanche Energy EAS 20 mJ Duty Cycle ≤ 1 %; L = 0.1 mH 1
Maximum Power Dissipation PD 100 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient RthJA 18 22 °C/W t ≤ 10 sec 1
Maximum Junction-to-Ambient RthJA 40 50 °C/W Steady State 1
Maximum Junction-to-Case RthJC 3.2 4 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1 2 3 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 60 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 50 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance rDS(on) 0.025 Ω VGS = 10 V, ID = 15 A 2
Drain-Source On-State Resistance rDS(on) 0.055 Ω VGS = 10 V, ID = 15 A, TJ = 125 °C 2
Drain-Source On-State Resistance rDS(on) 0.069 Ω VGS = 10 V, ID = 15 A, TJ = 175 °C 2
Drain-Source On-State Resistance rDS(on) 0.03 Ω VGS = 4.5 V, ID = 10 A 2
Forward Transconductance gfs 20 S VDS = 15 V, ID = 15 A 2
Total Gate Charge Qg 11 17 nC VDS = 30 V, VGS = 10 V, ID = 23 A 2
Turn-On Delay Time td(on) 8 15 ns VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 15 25 ns VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 25 40 ns VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω 2
Pulsed Current ISM 50 A 2
Diode Forward Voltage VSD 1 1.5 V VSD = 15 A, VGS = 0 V 2
Reverse Recovery Time trr 30 60 ns IF = 15 A, di/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: 23N06-31-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 23n06-31-vb-etched.step / 23n06-31-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 23n06-31-vb.step / 23n06-31-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 f9cf8f58166f6b58, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF