component
2303-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2303-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
2303-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated VGS ±20 V (absolute maximum). |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source-drain diode current is rated -1 A at TA = 25 °C when surface mounted on a 1" x 1" FR4 board. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is rated -30 V and continuous drain current is -5.4 A at TA = 25 °C when surface mounted on a 1" x 1" FR4 board. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.5 | -2 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 55 °C) | IDSS | -5 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -2.5 | A | VDS - 5 V, VGS = - 10 V | 2 | ||
| Total Gate Charge (VGS = -10 V) | Qg | 24 | 36 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 5.4 A | 2 | |
| Total Gate Charge (VGS = -4.5 V) | Qg | 11.4 | 17 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A | 2 | |
| Gate Resistance | Rg | 1.5 | 7.7 | 15.4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time (VGEN = -10 V) | td(on) | 13 | 20 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 10 V, Rg = 1 | 2 | |
| Turn-Off Delay Time (VGEN = -10 V) | td(off) | 38 | 57 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 10 V, Rg = 1 | 2 | |
| Fall Time (VGEN = -10 V) | tf | 6 | 12 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 10 V, Rg = 1 | 2 | |
| Turn-On Delay Time (VGEN = -4.5 V) | td(on) | 28 | 42 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Rise Time (VGEN = -4.5 V) | tr | 16 | 24 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Turn-Off Delay Time (VGEN = -4.5 V) | td(off) | 30 | 45 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Fall Time (VGEN = -4.5 V) | tf | 10 | 20 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Body Diode Voltage | VSD | -0.8 | -1.2 | V | IS = - 4.3 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 15 | 23 | ns | IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 7 | 14 | nC | IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -5.6 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -5.4 | A | TA = 25 °C (notes b,c) | 1 | ||
| Continuous Drain Current | ID | -4.3 | A | TA = 70 °C (notes b,c) | 1 | ||
| Pulsed Drain Current | IDM | -18 | A | t = 100 µs | 1 | ||
| Continuous Source-Drain Diode Current | IS | -2.1 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -1 | A | TA = 25 °C (notes b,c) | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA = 25 °C (notes b,c) | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA = 70 °C (notes b,c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA | 75 | 100 | °C/W | t ≤ 5 s (notes b,d) | 1 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 166 | °C/W | steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain), steady state | RthJF | 40 | 50 | °C/W | steady state | 1 |
CAD (KiCad official)
- Symbol:
2303-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
2303-vb-etched.step/2303-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2303-vb.step/2303-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
16fd73adf37e8b81, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2303-VB
**VBsemi Elec** · MOSFETs · SOT-23(TO-236)
2303-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated VGS ±20 V (absolute maximum). |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source-drain diode current is rated -1 A at TA = 25 °C when surface mounted on a 1" x 1" FR4 board. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is rated -30 V and continuous drain current is -5.4 A at TA = 25 °C when surface mounted on a 1" x 1" FR4 board. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -30 | | | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -0.5 | | -2 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (TJ = 55 °C) | IDSS | | | -5 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | -2.5 | | | A | VDS - 5 V, VGS = - 10 V | 2 |
| Total Gate Charge (VGS = -10 V) | Qg | | 24 | 36 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 5.4 A | 2 |
| Total Gate Charge (VGS = -4.5 V) | Qg | | 11.4 | 17 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A | 2 |
| Gate Resistance | Rg | 1.5 | 7.7 | 15.4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time (VGEN = -10 V) | td(on) | | 13 | 20 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 10 V, Rg = 1 | 2 |
| Turn-Off Delay Time (VGEN = -10 V) | td(off) | | 38 | 57 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 10 V, Rg = 1 | 2 |
| Fall Time (VGEN = -10 V) | tf | | 6 | 12 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 10 V, Rg = 1 | 2 |
| Turn-On Delay Time (VGEN = -4.5 V) | td(on) | | 28 | 42 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 4.5 V, Rg = 1 | 2 |
| Rise Time (VGEN = -4.5 V) | tr | | 16 | 24 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 4.5 V, Rg = 1 | 2 |
| Turn-Off Delay Time (VGEN = -4.5 V) | td(off) | | 30 | 45 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 4.5 V, Rg = 1 | 2 |
| Fall Time (VGEN = -4.5 V) | tf | | 10 | 20 | ns | VDD = - 15 V, RL = 3.5, ID - 4.3 A, VGEN = - 4.5 V, Rg = 1 | 2 |
| Body Diode Voltage | VSD | | -0.8 | -1.2 | V | IS = - 4.3 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 15 | 23 | ns | IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 7 | 14 | nC | IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Drain-Source Voltage | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -5.6 | | | A | TC = 25 °C, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | -5.4 | | | A | TA = 25 °C (notes b,c) | 1 |
| Continuous Drain Current | ID | -4.3 | | | A | TA = 70 °C (notes b,c) | 1 |
| Pulsed Drain Current | IDM | -18 | | | A | t = 100 µs | 1 |
| Continuous Source-Drain Diode Current | IS | -2.1 | | | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | -1 | | | A | TA = 25 °C (notes b,c) | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 1.6 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 1.25 | W | TA = 25 °C (notes b,c) | 1 |
| Maximum Power Dissipation | PD | | | 0.8 | W | TA = 70 °C (notes b,c) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA | | 75 | 100 | °C/W | t ≤ 5 s (notes b,d) | 1 |
| Maximum Junction-to-Ambient (steady state) | RthJA | | | 166 | °C/W | steady state (note d) | 1 |
| Maximum Junction-to-Foot (Drain), steady state | RthJF | | 40 | 50 | °C/W | steady state | 1 |
## CAD (KiCad official)
- Symbol: `2303-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `2303-vb-etched.step` / `2303-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2303-vb.step` / `2303-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590235297918050304) (9 pp, sha256 `16fd73adf37e8b81`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2303-vb-datasheet.pdf)