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220N03MD-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistor220n03md-vbfactory-2.0.0extractor-text

Verified 220N03MD-VB

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: 220N03MD-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-jtlhx4o1/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ 220n03md-vb.kicad_sym✓ 220n03md-vb.kicad_mod✓ 220n03md-vb.step
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3D Model

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Symbol & Footprint

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Contents

README

markdown

220N03MD-VB

VBsemi Elec · MOSFETs · SO-8

220N03MD-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1 (VDS 20 V, ID 7.1 A at TA = 25 °C).
2 G1 input Gate of N-channel MOSFET 1 (VGS ±12 V max, threshold 0.6 to 1.5 V at 250 µA).
3 S2 passive Source of N-channel MOSFET 2 (VDS 20 V, ID 7.1 A at TA = 25 °C).
4 G2 input Gate of N-channel MOSFET 2 (VGS ±12 V max, threshold 0.6 to 1.5 V at 250 µA).
5 D2 passive Drain of N-channel MOSFET 2, tied to pin 6 (VDS 20 V, pulsed IDM 40 A).
6 D2 passive Drain of N-channel MOSFET 2, tied to pin 5 (VDS 20 V, pulsed IDM 40 A).
7 D1 passive Drain of N-channel MOSFET 1, tied to pin 8 (VDS 20 V, pulsed IDM 40 A).
8 D1 passive Drain of N-channel MOSFET 1, tied to pin 7 (VDS 20 V, pulsed IDM 40 A).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) 0.6 1.5 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 20 A VDS ≥ 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.019 Ω VGS = 4.5 V, ID = 7.1 A 2
Drain-Source On-State Resistance RDS(on) 0.026 Ω VGS = 2.5 V, ID = 6.0 A 2
Diode Forward Voltage VSD 1.2 V IS = 1.7 A, VGS = 0 V 2
Gate Resistance Rg 1.6 2.7 Ω f = 1 MHz 2
Drain-Source Voltage VDS 20 V TA = 25 °C 1
Gate-Source Voltage VGS -12 12 V TA = 25 °C 1
Continuous Drain Current ID 7.1 A TJ = 150 °C, TA = 25 °C 1
Continuous Drain Current ID 5.7 A TJ = 150 °C, TA = 70 °C 1
Pulsed Drain Current IDM 40 A 10 µs pulse width 1
Continuous Source Current (Diode Conduction) IS 1.7 A TA = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C 1
Maximum Power Dissipation PD 1.3 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 62.5 °C/W Surface mounted on FR4 board, t ≤ 10 s 1
Forward Transconductance gfs 27 S VDS = 10 V, ID = 7.1 A 2
Total Gate Charge Qg 9.5 nC VDS = 10 V, VGS = 4.5 V, ID = 7.1 A 2
Gate-Source Charge Qgs 1.5 nC VDS = 10 V, VGS = 4.5 V, ID = 7.1 A 2
Gate-Drain Charge Qgd 2.5 nC VDS = 10 V, VGS = 4.5 V, ID = 7.1 A 2
Turn-On Delay Time td(on) 10 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω 2
Rise Time tr 15 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω 2
Turn-Off Delay Time td(off) 38 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω 2
Fall Time tf 25 ns VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω 2
Source-Drain Reverse Recovery Time trr 26 ns IF = 1.7 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: 220N03MD-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: 220n03md-vb-etched.step / 220n03md-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 220n03md-vb.step / 220n03md-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 362c8707f177ecb1, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF