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20P07

HL · MOSFETs · SOT-23-3L

20P07 from HL, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the P-channel MOSFET, with a gate-source voltage rating of ±12 V.
2 S passive Source of the P-channel MOSFET; drain-source voltage is rated -20 V and continuous drain current -6.0 A at TA=25°C.
3 D passive Drain of the P-channel MOSFET; drain-source voltage is rated -20 V and pulsed drain current -18.8 A.

Key specifications

Parameter Value
Manufacturer HL
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -6 A @T=25℃, VGS @ 10V 1
Continuous Drain Current ID -4.8 A @T=70℃, VGS @ 10V 1
Pulsed Drain Current IDM -18.8 A 1
Total Power Dissipation PD 1 W @T=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 125 ℃/W Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 80 ℃/W Note 1 1
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 21 27 mΩ VGS=-4.5V, ID=-6.5A 2
Static Drain-Source On-Resistance RDS(ON) 29 39 mΩ VGS=-2.5V, ID=-5A 2
Gate Threshold Voltage VGS(th) -0.6 -0.8 -1.4 V VDS=VGS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-20V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 10 uA VDS=-16V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS 100 nA VGS = 12 V, VDS =0V 2
Continuous Source Current IS -6 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -18.8 A 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2
BVDSS Temperature Coefficient ΔBVDSS/ΔTJ -0.01 V/℃ Reference to 25℃, ID=-1mA 2
Total Gate Charge (-4.5V) Qg 10 nC VDS=-10V, VGS=-4.5V, ID=-6.5A 2
Gate-Source Charge Qgs 1.5 nC 2
Gate-Drain Charge Qgd 3 nC 2
Turn-On Delay Time td(on) 30 ns VDD=-10V, VGS=-4.5V, RG=6Ω, ID=-1A 2
Rise Time tr 25 ns 2
Turn-Off Delay Time td(off) 70 ns 2
Fall Time tf 50 ns 2
Input Capacitance Ciss 1210 pF VDS=-10V, VGS=0V, f=1MHz 2
Output Capacitance Coss 310 pF 2
Reverse Transfer Capacitance Crss 290 pF 2
Reverse Recovery Time trr 52 nS IF=-4A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 28 nC 2

CAD (KiCad official)

  • Symbol: 20P07
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: 20p07-etched.step / 20p07-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 20p07.step / 20p07.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (5 pp, sha256 19ca3d29e5b480b6, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF