component
20P06S
Public Made by Adomby adom
GOODWORK MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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20P06S
GOODWORK · MOSFETs · TO-252
20P06S from GOODWORK, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with VGS(th) of -1.0 V min to -2.5 V max at ID=-250uA. |
| 2 | D | passive | Drain, also the exposed tab; drain-source voltage -60 V and continuous drain current -18 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is -9.5 A and pulsed source current is -24 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -18 | A | VGS @ -10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -8.8 | A | VGS @ -10V, TC=100℃ | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -3.5 | A | VGS @ -10V, TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -2.8 | A | VGS @ -10V, TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -25 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | 1 | |||
| Avalanche Current | IAS | -20 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 25 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 5 | ℃/W | note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 80 | 97 | mΩ | VGS=-10V, ID=-8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 97 | 126 | mΩ | VGS=-4.5V, ID=-6A | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=150℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -9.5 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -24 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Forward Transconductance | gfs | 5.8 | S | VDS=-5V, ID=-5A | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.049 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 5.42 | mV/℃ | 2 | |||
| Total Gate Charge (-4.5V) | Qg | 5.85 | nC | VDS=-20V, VGS=-4.5V, ID=-5A | 2 | ||
| Gate-Source Charge | Qgs | 2.9 | nC | VDS=-20V, VGS=-4.5V, ID=-5A | 2 | ||
| Gate-Drain Charge | Qgd | 1.8 | nC | VDS=-20V, VGS=-4.5V, ID=-5A | 2 | ||
| Turn-On Delay Time | Td(on) | 10 | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 | ||
| Rise Time | Tr | 17 | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 | ||
| Turn-Off Delay Time | Td(off) | 22 | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 | ||
| Fall Time | Tf | 21 | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 | ||
| Input Capacitance | Ciss | 715 | pF | VDS=-15V, VGS=0V, F=1MHz | 2 | ||
| Output Capacitance | Coss | 51 | pF | VDS=-15V, VGS=0V, F=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 34 | pF | VDS=-15V, VGS=0V, F=1MHz | 2 | ||
| Reverse Recovery Time | trr | 10.2 | nS | IF=-8A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 5.4 | nC | IF=-8A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
20P06S - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
20p06s-etched.step/20p06s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);20p06s.step/20p06s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOODWORK datasheet (4 pp, sha256
2f4b262db586fece, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 20P06S
**GOODWORK** · MOSFETs · TO-252
20P06S from GOODWORK, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with VGS(th) of -1.0 V min to -2.5 V max at ID=-250uA. |
| 2 | D | passive | Drain, also the exposed tab; drain-source voltage -60 V and continuous drain current -18 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is -9.5 A and pulsed source current is -24 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | -18 | A | VGS @ -10V, TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | -8.8 | A | VGS @ -10V, TC=100℃ | 1 |
| Continuous Drain Current | ID@TA=25℃ | | | -3.5 | A | VGS @ -10V, TA=25℃ | 1 |
| Continuous Drain Current | ID@TA=70℃ | | | -2.8 | A | VGS @ -10V, TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | -25 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 20 | mJ | | 1 |
| Avalanche Current | IAS | | | -20 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 25 | W | TC=25℃ | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 2 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | Surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 5 | ℃/W | note 1 | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V, ID=-250uA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 80 | 97 | mΩ | VGS=-10V, ID=-8A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 97 | 126 | mΩ | VGS=-4.5V, ID=-6A | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=-48V, VGS=0V, TJ=150℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | -9.5 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -24 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| Forward Transconductance | gfs | | 5.8 | | S | VDS=-5V, ID=-5A | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | -0.049 | | V/℃ | Reference to 25℃, ID=-1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | 5.42 | | mV/℃ | | 2 |
| Total Gate Charge (-4.5V) | Qg | | 5.85 | | nC | VDS=-20V, VGS=-4.5V, ID=-5A | 2 |
| Gate-Source Charge | Qgs | | 2.9 | | nC | VDS=-20V, VGS=-4.5V, ID=-5A | 2 |
| Gate-Drain Charge | Qgd | | 1.8 | | nC | VDS=-20V, VGS=-4.5V, ID=-5A | 2 |
| Turn-On Delay Time | Td(on) | | 10 | | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 |
| Rise Time | Tr | | 17 | | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 |
| Turn-Off Delay Time | Td(off) | | 22 | | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 |
| Fall Time | Tf | | 21 | | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 |
| Input Capacitance | Ciss | | 715 | | pF | VDS=-15V, VGS=0V, F=1MHz | 2 |
| Output Capacitance | Coss | | 51 | | pF | VDS=-15V, VGS=0V, F=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 34 | | pF | VDS=-15V, VGS=0V, F=1MHz | 2 |
| Reverse Recovery Time | trr | | 10.2 | | nS | IF=-8A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 5.4 | | nC | IF=-8A, dI/dt=100A/µs, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `20P06S`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `20p06s-etched.step` / `20p06s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `20p06s.step` / `20p06s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOODWORK datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603362158080516096) (4 pp, sha256 `2f4b262db586fece`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/20p06s-datasheet.pdf)