# 20P06 TO252-VB

**VBsemi Elec** · MOSFETs · TO-252

20P06 TO252-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage is rated at ±20 V (VGS), per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; continuous drain current is -30 A at TC = 25 °C and -25 A at TC = 100 °C, with VDS of -60 V. |
| 3 | S | passive | Source terminal; continuing source current (diode conduction) is rated at -20 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -30 | A | TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | -25 | A | TC = 100 °C | 1 |
| Continuing Source Current (Diode Conduction) | IS |  |  | -20 | A |  | 1 |
| Avalanche Current | IAS |  |  | -20 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 7.2 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD |  |  | 34 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 4 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 |  |  | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -2 | -3 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = - 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -50 | µA | VDS = - 60 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -150 | µA | VDS = - 60 V, VGS = 0 V, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | rDS(on) |  |  | 0.061 | Ω | VGS = - 10 V, ID = - 5 A | 2 |
| Drain-Source On-State Resistance | rDS(on) |  |  | 0.1 | Ω | VGS = - 10 V, ID = - 5 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | rDS(on) |  |  | 0.15 | Ω | VGS = - 10 V, ID = - 5 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | rDS(on) |  |  | 0.072 | Ω | VGS = - 4.5 V, ID = - 2 A | 2 |
| Forward Voltage | VSD |  | -0.9 | -1.3 | V | IF = - 2 A, VGS = 0 V | 2 |
| Junction-to-Ambient (t ≤ 10 sec) | RthJA |  | 20 | 25 | °C/W | t ≤ 10 sec | 1 |
| Junction-to-Ambient (Steady State) | RthJA |  | 62 | 75 | °C/W | Steady state | 1 |
| Junction-to-Case | RthJC |  | 56 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `20P06 TO252-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `20p06-to252-vb-etched.step` / `20p06-to252-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `20p06-to252-vb.step` / `20p06-to252-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609090039242366976) (8 pp, sha256 `23be0cacc2d991d1`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/20p06-to252-vb-datasheet.pdf)