component
20N03-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown20N03-VB
VBsemi Elec · MOSFETs · TO-252
20N03-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at ±20 V (absolute maximum). |
| 2 | D | passive | Drain terminal; drain-source voltage is rated at 30 V, and the drain is the package tab/case; continuous drain current is 50 A at TC = 25 °C. |
| 3 | S | passive | Source terminal; continuous source-drain diode current IS is 50 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TA = 25 °C, unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C, unless otherwise noted | 1 | |
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 94.8 | mJ | 1 | |||
| Continuous Source-Drain Diode Current | IS | 50 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 3.13 | A | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 100 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 75 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.25 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.33 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 90 | A | VDS 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.007 | Ω | VGS = 10 V, ID = 21.8 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.009 | Ω | VGS = 4.5 V, ID = 18 A | 2 | ||
| Total Gate Charge | Qg | 25 | 35 | nC | VDS = 15 V, VGS = 4.5 V, ID = 21.8 A | 2 | |
| Total Gate Charge | Qg | 35 | 45 | nC | VDS = 15 V, VGS = 10 V, ID = 21.8 A | 2 | |
| Gate Resistance | Rg | 1.4 | 2.1 | Ω | f = 1 MHz | 2 | |
| Turn-On Delay Time | td(on) | 18 | 27 | ns | VDD = 15 V, RL = 0.625 Ω, ID ≅ 24 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 11 | 17 | ns | VDD = 15 V, RL = 0.625 Ω, ID ≅ 24 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 70 | 105 | ns | VDD = 15 V, RL = 0.625 Ω, ID ≅ 24 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 15 | ns | VDD = 15 V, RL = 0.625 Ω, ID ≅ 24 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 55 | 83 | ns | VDD = 15 V, RL = 0.67 Ω, ID ≅ 22.5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 180 | 270 | ns | VDD = 15 V, RL = 0.67 Ω, ID ≅ 22.5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 55 | 83 | ns | VDD = 15 V, RL = 0.67 Ω, ID ≅ 22.5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 12 | 18 | ns | VDD = 15 V, RL = 0.67 Ω, ID ≅ 22.5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 22 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 52 | 78 | ns | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 70.2 | 105 | nC | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Maximum Junction-to-Ambient, t ≤ 10 sec | RthJA | 32 | 40 | °C/W | t ≤ 10 sec | 1 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 90 | °C/W | Steady state, per note d | 1 | ||
| Maximum Junction-to-Case, steady state | RthJC | 0.5 | 0.6 | °C/W | Steady state | 1 |
CAD (KiCad official)
- Symbol:
20N03-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
20n03-vb-etched.step/20n03-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);20n03-vb.step/20n03-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
50db9b7eb34edf6e, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).