component
2010S
Public Made by Adomby adom
HL MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdown2010S
HL · MOSFETs · SOP-8
2010S from HL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pin 1 is next to the package dot); drain-source rated 20V, 8A continuous. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the same source as pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the same source as pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage limited to ±12V, threshold 0.45V min to 1V max at 250µA. |
| 5 | D | passive | Drain of the N-channel MOSFET; VDSS 20V max, pulsed drain current 28A. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied to the same drain as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied to the same drain as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied to the same drain as pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 2 | |
| Drain Cut-off Current | IDSS | 1 | µA | VDS = 20V, VGS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.7 | 1 | V | VGS = VDS, ID = 250µA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 13 | 20 | mΩ | VGS = 4.5V, ID = 5A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 18 | 30 | mΩ | VGS = 2.5V, ID = 4.7A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 28 | 57 | mΩ | VGS = 1.8V, ID = 4.3A | 2 | |
| Body Diode Voltage | VSD | 1.2 | V | IS = 4A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 8 | A | 2 | |||
| Drain-Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 8 | A | T = 25 ℃ | 1 | ||
| Pulsed Drain Current | IDM | 28 | A | Repetitive rating, pulse width limited by TJ(MAX) (note 1) | 1 | ||
| Power Dissipation | PD | 2.25 | W | T = 25 ℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 80 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 2) | 1 |
CAD (KiCad official)
- Symbol:
2010S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
2010s-etched.step/2010s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2010s.step/2010s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (5 pp, sha256
7526b16c21efae1f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).