component
1PS79SB30
Public Made by Adomby adom
Nexperia Schottky Barrier Diodes (SBD), SOD-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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1PS79SB30
Nexperia · Schottky Barrier Diodes (SBD) · SOD-523
1PS79SB30 from Nexperia, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the Schottky diode (marked by the marking bar); 40 V maximum reverse voltage and 200 mA forward current. |
| 2 | A | passive | Anode of the Schottky diode; 200 mA maximum continuous forward current with typical VF of 320 mV at 10 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOD-523 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward current | IF | 200 | mA | 2 | |||
| Reverse voltage | VR | 40 | V | 2 | |||
| Repetitive peak forward current | IFRM | 300 | mA | tp ≤ 1 s; δ ≤ 0.5 | 2 | ||
| Non-repetitive peak forward current | IFSM | 1 | A | tp = 8.3 ms; half sine wave; Tj(init) = 25 °C | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| Ambient temperature | Tamb | -65 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 450 | K/W | in free air | 2 | ||
| Forward voltage | VF | 190 | 220 | mV | IF = 0.1 mA; Tamb = 25 °C | 3 | |
| Forward voltage | VF | 250 | 290 | mV | IF = 1 mA; Tamb = 25 °C | 3 | |
| Forward voltage | VF | 320 | 360 | mV | IF = 10 mA; Tamb = 25 °C | 3 | |
| Forward voltage | VF | 440 | 500 | mV | IF = 100 mA; Tamb = 25 °C | 3 | |
| Forward voltage | VF | 520 | 600 | mV | IF = 200 mA; Tamb = 25 °C | 3 | |
| Reverse current | IR | 0.5 | µA | VR = 25 V; pulsed; tp = 300 µs; δ = 0.02; Tamb = 25 °C | 3 | ||
| Diode capacitance | Cd | 20 | pF | VR = 1 V; f = 1 MHz; Tamb = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
1PS79SB30 - Footprint:
Diode_SMD:D_SOD-523 - 3D model: SOD-523 (KiCad packages3D, STEP)
- 3D model files:
1ps79sb30-etched.step/1ps79sb30-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);1ps79sb30.step/1ps79sb30.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (7 pp, sha256
3ad01da3b56da2f4, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 1PS79SB30
**Nexperia** · Schottky Barrier Diodes (SBD) · SOD-523
1PS79SB30 from Nexperia, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the Schottky diode (marked by the marking bar); 40 V maximum reverse voltage and 200 mA forward current. |
| 2 | A | passive | Anode of the Schottky diode; 200 mA maximum continuous forward current with typical VF of 320 mV at 10 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOD-523 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward current | IF | | | 200 | mA | | 2 |
| Reverse voltage | VR | | | 40 | V | | 2 |
| Repetitive peak forward current | IFRM | | | 300 | mA | tp ≤ 1 s; δ ≤ 0.5 | 2 |
| Non-repetitive peak forward current | IFSM | | | 1 | A | tp = 8.3 ms; half sine wave; Tj(init) = 25 °C | 2 |
| Junction temperature | Tj | | | 150 | °C | | 2 |
| Ambient temperature | Tamb | -65 | | 150 | °C | | 2 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 2 |
| Thermal resistance from junction to ambient | Rth(j-a) | | | 450 | K/W | in free air | 2 |
| Forward voltage | VF | | 190 | 220 | mV | IF = 0.1 mA; Tamb = 25 °C | 3 |
| Forward voltage | VF | | 250 | 290 | mV | IF = 1 mA; Tamb = 25 °C | 3 |
| Forward voltage | VF | | 320 | 360 | mV | IF = 10 mA; Tamb = 25 °C | 3 |
| Forward voltage | VF | | 440 | 500 | mV | IF = 100 mA; Tamb = 25 °C | 3 |
| Forward voltage | VF | | 520 | 600 | mV | IF = 200 mA; Tamb = 25 °C | 3 |
| Reverse current | IR | | | 0.5 | µA | VR = 25 V; pulsed; tp = 300 µs; δ = 0.02; Tamb = 25 °C | 3 |
| Diode capacitance | Cd | | | 20 | pF | VR = 1 V; f = 1 MHz; Tamb = 25 °C | 3 |
## CAD (KiCad official)
- Symbol: `1PS79SB30`
- Footprint: `Diode_SMD:D_SOD-523`
- 3D model: SOD-523 (KiCad packages3D, STEP)
- 3D model files: `1ps79sb30-etched.step` / `1ps79sb30-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `1ps79sb30.step` / `1ps79sb30.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/1PS79SB30.pdf) (7 pp, sha256 `3ad01da3b56da2f4`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/1ps79sb30-datasheet.pdf)