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1N65L

Public Made by Adom

by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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1N65L

UMW · MOSFETs · TO-252

1N65L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the 650V N-channel MOSFET; the datasheet rates gate-source voltage VGS at ±30 V.
2 D passive DRAIN terminal; rated for VDS of 650 V and continuous drain current ID of 1 A at TC=25°C.
3 S passive SOURCE terminal; the reference terminal for the gate-source (VGS ±30 V) and drain-source ratings.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 650 V 1
Gate-source voltage VGS -30 30 V 1
Continuous drain current ID 1 A TC=25°C 1
Continuous drain current ID 0.6 A TC=100°C 1
Drain current - pulsed IDM 4 A 1
Junction temperature TJ 150 °C 1
Storage temperature TSTG -55 150 °C 1
Single pulse avalanche energy EAS 14 mJ TJ=25°C, VDD=50V, L=30mH, RG=25Ω, IAS=1.0A 1
Power dissipation PD 28 W TA=25°C 1
Thermal resistance junction-lead RthJL 4.46 °C/W TO-251/251S/252 package 2
Thermal resistance junction-ambient RthJA 110 °C/W TO-251T/251S/252 and SOT-223 package 2
Drain-source breakdown voltage BVDSS 650 V VGS=0V, ID=250µA 3
Gate threshold voltage VGS(th) 2 4 V VDS=VGS, ID=250µA 3
Gate-body leakage current IGSS -100 100 nA VDS=0, VGS=±30V 3
Static drain-source on resistance RDS(ON) 8.5 11 Ω VGS=10V, ID=0.5A 3
Diode forward voltage VSD 1.4 V TJ=25°C, IS=0.5A, VGS=0V 3
Drain-source leakage current IDSS 1 µA VDS=600V, VGS=0V, TJ=25°C 3
Drain-source leakage current IDSS 10 µA VDS=480V, VGS=0V, TJ=125°C 3
Continuous diode forward current IS 1 A 3
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.6 V/°C ID=250µA, referenced to 25°C 3
Input capacitance Ciss 150 pF VGS=0V, VDS=25V, f=1MHz 3
Output capacitance Coss 25 pF VGS=0V, VDS=25V, f=1MHz 3
Reverse transfer capacitance Crss 5.4 pF VGS=0V, VDS=25V, f=1MHz 3
Turn-off delay time tD(off) 13 ns VDD=300V, ID=1A, RG=25Ω 3
Total gate charge Qg 4.8 nC ID=1A, VDS=480V, VGS=10V 3
Gate-to-source charge Qgs 0.7 nC ID=1A, VDS=480V, VGS=10V 3
Gate-to-drain charge Qgd 2.7 nC ID=1A, VDS=480V, VGS=10V 3
Reverse recovery time trr 190 ns TJ=25°C, IF=1A, di/dt=100A/μs 3
Reverse recovery charge Qrr 0.53 uC TJ=25°C, IF=1A, di/dt=100A/μs 3

CAD (KiCad official)

  • Symbol: 1N65L
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 1n65l-etched.step / 1n65l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 1n65l.step / 1n65l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 0ede9e10dd8ee722, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF