component
1N60L
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 5d ago |
| viewers | 5d ago |
| 1n60l-etched.glb | 5d ago |
| 1n60l-etched.step | 5d ago |
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| README.md | 5d ago |
1N60L
UMW · MOSFETs · TO-252
1N60L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the MOSFET; the datasheet rates the gate-source voltage VGS at ±30 V. |
| 2 | D | passive | DRAIN terminal of the MOSFET; the datasheet rates the drain-source voltage VDS at 600 V and continuous drain current ID at 1 A (TC=25°C). |
| 3 | S | passive | SOURCE terminal of the MOSFET; the datasheet gives no separate electrical limit for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250µA | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250µA | 3 | |
| Drain-source Leakage Current | IDSS | 1 | µA | VDS=600V, VGS=0V, TJ=25°C | 3 | ||
| Drain-source Leakage Current | IDSS | 10 | µA | VDS=480V, VGS=0V, TJ=125°C | 3 | ||
| Gate-body Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0 | 3 | |
| Static Drain-source On Resistance | RDS(ON) | 8.5 | Ω | VGS=10V, ID=0.5A | 3 | ||
| Diode Forward Voltage | VSD | 1.4 | V | TJ=25°C, IS=0.5A, VGS=0V | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.6 | V/°C | ID=250µA, referenced to 25°C | 3 | ||
| Drain-source Voltage | VDS | 600 | V | 1 | |||
| Gate-source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 1 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 0.6 | A | TC=100°C | 1 | ||
| Drain Current - Pulsed | IDM | 4 | A | Pulse width limited by maximum junction temperature | 1 | ||
| Single Pulse Avalanche Energy | EAS | 14 | mJ | TJ=25°C, VDD=50V, L=30mH, RG=25Ω, IAS=1.0A | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-ambient | RthJA | 110 | °C/W | TO-251T/251S/252/223 package | 2 | ||
| Thermal Resistance Junction-lead | RthJL | 4.46 | °C/W | TO-251T/251S/252/223 package | 2 |
CAD (KiCad official)
- Symbol:
1N60L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
1n60l-etched.step/1n60l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);1n60l.step/1n60l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
167c49705d125a75, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).