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1N60L-TN3-R

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UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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1N60L-TN3-R

UTC Unisonic Tech · MOSFETs · TO-252

1N60L-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet rates gate-source voltage VGSS at ±30 V.
2 D passive Drain of the MOSFET; the datasheet rates drain-source voltage VDSS at 600 V and continuous drain current ID at 1.2 A.
3 S passive Source of the MOSFET; the datasheet gives no separate source-pin limit beyond the device ratings (for example pulsed drain current IDM of 4.8 A).

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 600 V VGS=0V, ID=250μA 4
Drain-Source Leakage Current IDSS 10 μA VDS=600V, VGS=0V 4
Gate-Source Leakage Current, Forward IGSS 100 nA VGS=30V, VDS=0V 4
Gate-Source Leakage Current, Reverse IGSS -100 nA VGS=-30V, VDS=0V 4
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250μA 4
Static Drain-Source On-State Resistance RDS(ON) 9.3 11.5 Ω VGS=10V, ID=0.6A 4
Input Capacitance CISS 120 150 pF 4
Output Capacitance COSS 20 25 pF 4
Reverse Transfer Capacitance CRSS 3 4 pF VDS=25V, VGS=0V, f=1MHz 4
Total Gate Charge QG 5 6 nC 4
Turn-On Delay Time tD(ON) 5 20 ns 4
Turn-On Rise Time tR 25 60 ns 4
Turn-Off Delay Time tD(OFF) 7 25 ns 4
Turn-Off Fall Time tF 25 60 ns VDD=300V, ID=1.2A, RG=50Ω 4
Drain-Source Voltage VDSS 600 V 3
Gate-Source Voltage VGSS -30 30 V 3
Avalanche Current (Repetitive) IAR 1.2 A Note 2 (repetitive rating) 3
Continuous Drain Current ID 1.2 A 3
Pulsed Drain Current IDM 4.8 A Note 2 (repetitive rating) 3
Single Pulsed Avalanche Energy EAS 50 mJ Note 3: L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3
Repetitive Avalanche Energy EAR 4 mJ Note 2 (repetitive rating) 3
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 4: ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 3
Power Dissipation (TO-251/TO-252 group) PD 28 W TO-251/TO-252 package group 3
Junction Temperature TJ 150 °C 3
Operating Temperature TOPR -55 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Junction to Ambient Thermal Resistance (TO-251/TO-252 group) θJA 110 °C/W TO-251/TO-252 package group 3
Junction to Case Thermal Resistance (TO-251/TO-252 group) θJc 4.53 °C/W TO-251/TO-252 package group 3

CAD (KiCad official)

  • Symbol: 1N60L-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 1n60l-tn3-r-etched.step / 1n60l-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 1n60l-tn3-r.step / 1n60l-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (9 pp, sha256 3e5031eacf1caf77, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF