# 1N60G-AA3-R

**UTC(Unisonic Tech)** · MOSFETs · SOT-223

1N60G-AA3-R from UTC(Unisonic Tech), in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet limits gate-source voltage VGSS to ±30 V. |
| 2 | D | passive | Drain terminal; the datasheet rates drain-source voltage VDSS at 600 V and continuous drain current ID at 1 A. |
| 3 | S | passive | Source terminal; the datasheet rates maximum continuous diode forward current IS at 1 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | SOT-223 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 600 | V |  | 3 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 3 |
| Continuous Drain Current | ID |  |  | 1 | A |  | 3 |
| Avalanche Energy Single Pulsed | EAS |  |  | 7.2 | mJ | Single Pulsed (Note 2) | 3 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 4.5 | V/ns | Note 3 | 3 |
| Power Dissipation SOT-223 | PD |  |  | 8 | W | TA=25°C | 3 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 3 |
| Operating Temperature | TOPR | -55 |  | 150 | °C |  | 3 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 3 |
| Junction to Ambient SOT-89/SOT-223 | θJA |  |  | 150 | °C/W |  | 3 |
| Junction to Case SOT-89/SOT-223 | θJC |  |  | 15.6 | °C/W |  | 3 |
| Drain-Source Breakdown Voltage | BVDSS | 600 |  |  | V | VGS=0V, ID=250μA | 4 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | μA | VDS=600V, VGS=0V | 4 |
| Forward Gate-Source Leakage Current | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 4 |
| Reverse Gate-Source Leakage Current | IGSS | -100 |  |  | nA | VGS=-30V, VDS=0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 12 | 15 | Ω | VGS=10V, ID=0.5A | 4 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 1 | A |  | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 2 | A |  | 4 |

## CAD (KiCad official)

- Symbol: `1N60G-AA3-R`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `1n60g-aa3-r-etched.step` / `1n60g-aa3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `1n60g-aa3-r.step` / `1n60g-aa3-r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UTC(Unisonic Tech) datasheet](docs/1n60g-aa3-r-datasheet.pdf) (9 pp, sha256 `a128c580802b879a`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/1n60g-aa3-r-datasheet.pdf)