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1N5818W
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Shandong Jingdao Microelectronics Schottky Diodes, SOD-123FL. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown1N5818W
Shandong Jingdao Microelectronics · Schottky Diodes · SOD-123FL
1N5818W from Shandong Jingdao Microelectronics, in a SOD-123FL. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the Schottky barrier rectifier; pin 1 is identified as Cathode in the PINNING table (top view). |
| 2 | Anode | passive | Anode terminal of the Schottky barrier rectifier; pin 2 is identified as Anode in the PINNING table (top view). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SOD-123FL |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 30 | V | 1 | |||
| Maximum DC Blocking Voltage | VDC | 30 | V | 1 | |||
| Maximum RMS Voltage | VRMS | 21 | V | 1 | |||
| Maximum Average Forward Rectified Current | IF(AV) | 1 | A | 1 | |||
| Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load | IFSM | 25 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC method) | 1 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.55 | V | at 1 A | 1 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.875 | V | at 3 A | 1 | ||
| Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage | IR | 1 | mA | TA = 25°C, at rated DC reverse voltage | 1 | ||
| Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage | IR | 10 | mA | TA = 100°C, at rated DC reverse voltage | 1 | ||
| Typical Junction Capacitance | Cj | 110 | pF | 1 | |||
| Storage and Operating Junction Temperature Range | Tj, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
1N5818W - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123FL (KiCad packages3D, STEP)
- 3D model files:
1n5818w-etched.step/1n5818w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);1n5818w.step/1n5818w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (3 pp, sha256
b8c4e89837913d14, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).